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首页> 外文期刊>RSC Advances >Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets
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Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets

机译：通过共溅射双夹竹诺和ZnO靶制备的Ingazno薄膜晶体管的电气特性

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摘要

A co-sputtering of dual InGaZnO and ZnO targets, abbreviated by ZnO co-sputtered IGZO, is used to fabricate a high performance indium gallium zinc oxide ( IGZO) thin film transistor in this work. The ZnO co-sputtered IGZO thin film exhibits a smooth (R-rms similar to 0.29 nm), featureless, and amorphous structure with high carrier density (n similar to 4.29 x 10(17) cm(-3)). The performance and stability of ZnO co-sputtered IGZO TFT has been investigated and compared with the counterparts fabricated by a single ZnO and a-IGZO target respectively. Highest linear field effect mobility of 16.1 cm(2) V-1 s(-1) with an I-on/I-off ratio of 1.04 x 10(7), saturation drain current of 3.8 mu A at 5 V, and the lowest threshold voltage of 2.0 V with subthreshold swing of 0.21 V per decade have been obtained for the ZnO co-sputtered IGZO TFT. Furthermore, the ZnO co-sputtered IGZO TFT exhibited only a threshold voltage shift (Delta V-th) of 2.75 V under negative biased illuminated stress conditions for 2500 s, whereas the IGZO and ZnO based TFTs suffered from a huge threshold voltage shift (Delta V-th > 6 V) under the same conditions. The obtained performance and stability of TFTs with ZnO co-sputtered IGZO film is very promising for low voltage display applications.
机译：的双重InGaZnO和ZnO靶共溅射的ZnO共溅射IGZO缩写，使用在这项工作中，以制造高性能的铟镓锌氧化物（IGZO）薄膜晶体管。在ZnO共溅射IGZO薄膜表现出平滑的（R-有效值类似于0.29纳米），无特征的，并且无定形的结构具有高载流子密度（n个相似于4.29×10（17）厘米（-3））。的ZnO共溅射IGZO TFT的性能和稳定性进行了研究，并与分别由单一的ZnO和的a-IGZO靶制造的同行相比。以I ON / I断的1.04×10（7）在5 V 3.8亩A的，饱和漏电流，并且比率16.1厘米（2）V-1秒（-1）最高线性场效应迁移率已经获得了在ZnO共溅射IGZO TFT与每十年0.21的V亚阈值摆幅2.0V的的最低阈值电压。此外，在ZnO共溅射IGZO TFT仅仅显示出阈值电压偏移（德尔塔V-th）的下负，有偏照射胁迫条件为2500小号而IGZO和ZnO类薄膜晶体管从一个巨大的阈值电压偏移遭受2.75的V（德尔塔第v> 6 V）相同的条件下。将所得到的性能，并用氧化锌共溅射IGZO膜的TFT的稳定性非常有前途的低电压显示应用。

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  • 来源
    《RSC Advances》 |2015年第64期|共7页
  • 作者

    Tiwari Nidhi; Chauhan Ram Narayan; Liu Po-Tsun; Shieh Han-Ping D.;

  • 作者单位

    Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan;

    Vignan Univ Dept Mech Engn Guntur 522213 Andhra Pradesh India;

    Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan;

    Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan;

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  • 正文语种 eng
  • 中图分类 化学;
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