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Ab initio study of strained wurtzite InAs nanowires: engineering an indirect-direct band gap transition through size and uniaxial strain

机译:AB Initio Chario Thutitzite Inas纳米线的研究:通过尺寸和单轴应变工程间接直接带隙过渡

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摘要

This work is focused on the dependence of electronic properties of wurtzite InAs [0001] nanowires on their size and under uniaxial strain using ab initio calculations. Diameter and strain are studied up to 3.0 nm and 8% respectively. We found that the band gap can be modulated by varying the size of the nanowires and applying strain to them. The band gap increases with the decrease in diameter of the wires and the change in the band gap compared to the bulk is directly proportional to 1/D2. There is an indirect-direct band gap transition with changes in diameter and applied strain. The critical value of the diameter and strain for the indirect-direct band gap transition is 2.0 nm and 5.5%, respectively. This indirect-direct band gap transition can make InAs nanowires an optically active medium and hence useful in optoelectronics and light emitting devices.
机译:该作品专注于使用AB Initio计算纳米线纳米线对其大小和单轴应变的依赖性的依赖性。 直径和菌株分别研究3.0nm和8%。 我们发现可以通过改变纳米线的尺寸并将其施加到它们来调制带隙。 带隙随着导线的直径减小而增加,与散装相比的带间隙的变化直得与1 / d2成比例。 具有直径变化和施加应变的间接直接带隙过渡。 间接直接带隙过渡的直径和应变的临界值分别为2.0nm和5.5%。 该间接直接带隙转变可以使INAS纳米线成为光学活性介质,因此可用于光电子和发光器件。

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  • 来源
    《RSC Advances》 |2015年第109期|共8页
  • 作者单位

    Department of Physics Maharaja Krishnakumarsinhji Bhavnagar University Bhavnagar-364 001 India;

    Department of Physics Faculty of Science The M. S. University of Baroda Vadodara-390 002 India.;

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  • 正文语种 eng
  • 中图分类 化学;
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