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Transport properties and enhanced thermoelectric performance of aluminum doped Cu3SbSe4

机译：运输性能和增强铝的热电性能掺杂Cu3sbse4

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摘要

The electrical transport and thermoelectric properties of Cu3Sb1-xAlxSe4 (x = 0, 0.01, 0.02 and 0.03) compounds are investigated in the temperature range of 300-600 K. The results indicate that with increasing Al content from x = 0 to x = 0.03, hole concentration increases monotonically from 8.04 x 10(17) to 1.19 x 10(19) cm(-3) due to the substitution of Al3+ for Sb5+, thus leading to a large decrease in the electrical resistivity of Cu3Sb1-xAlxSe4. Meanwhile, the increase in hole concentration leads to a transition from a non-degenerate (x = 0) to a partial degenerate (x = 0.01, 0.02) and then to a degenerate state (x = 0.03). The power factor (PF) of all the Al-doped Cu3Sb1-xAlxSe4 samples is remarkably improved due to the optimization of hole concentration. Lattice thermal conductivity k(L) of the heavily doped sample (x = 0.03) is reduced. As a result, a large thermoelectric figure of merit ZT = 0.58 is obtained for Cu3Sb0.97Al0.03Se4 at 600 K, which is around 1.9 times as large as that of the un-doped Cu3SbSe4.
机译：Cu3SB1-XalxSe4（x = 0,0.01,0.02和0.03）化合物的电气传输和热电性在300-600k的温度范围内研究。结果表明，随着x = 0到x = 0.03的增加由于SB5 +的取代，空穴浓度从804×10（17）至1.19×10（19）cm（-3）单调增加，从而导致Cu3SB1-XalxSe4的电阻率大大降低。同时，空穴浓度的增加导致从非退化（x = 0）转变为部分退化（x = 0.01,0.02），然后达到退化状态（x = 0.03）。由于空穴浓度的优化，所有Al掺杂的Cu3Sb1-XalxSe4样品的功率因数（PF）显着提高。晶格导热率K（L）的重掺杂样品（X = 0.03）减少。结果，在600 k下获得Cu3SB0.97Al0.03Se4的大型热电值的优选Zt = 0.58，其为600 k，其与未掺杂的Cu3Sbse4的约1.9倍。

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  • 来源
    《RSC Advances》 |2015年第40期|共5页
  • 作者

    Li Yuanyue; Qin Xiaoying; Li Di; Li Xiyu; Liu Yongfei; Zhang Jian; Song Chunjun; Xin Hongxing;

  • 作者单位

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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