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首页> 外文期刊>RSC Advances >High performance of P(VDF-HFP)/Ag@TiO2 hybrid films with enhanced dielectric permittivity and low dielectric loss
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High performance of P(VDF-HFP)/Ag@TiO2 hybrid films with enhanced dielectric permittivity and low dielectric loss

机译：具有增强介电介电常数和低介电损耗的P（VDF-HFP）/ AG @ TiO2混合膜的高性能

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摘要

Ag@TiO2 core-shell nanoparticles were synthesized as fillers using a simple vapor-thermal method. Based on the nanoparticles, the P(VDF-HFP)/Ag@TiO2 hybrid films were first prepared by embedding Ag@TiO2 nanoparticles in a poly(vinylidene fluoride co-hexafluoropropylene) [P(VDF-HFP)] matrix. Microstructural and thermal analysis confirmed that Ag nanoparticles had been successfully coated by TiO2 shells and that the thickness of the shell layer was about 8-10 nm. The Ag@TiO2 nanoparticles act as nucleation sites to promote crystallization of the polymer matrix without changing its structure. The P(VDF-HFP)/Ag@TiO2 composite exhibited enhanced dielectric properties over a wide frequency range, and the dielectric permittivity of the polymer nanocomposites is enhanced by similar to 300% over the P(VDF-HFP) matrix at a low filler loading of 10 vol%. Moreover, P(VDF-HFP)/Ag@TiO2 also exhibit a higher dielectric constant than P(VDF-HFP)/Ag, P(VDF-HFP)/TiO2 and P(VDF-HFP)/Ag/TiO2 blend composites while maintaining a low loss tangent (below 0.03 at 1 kHz) to achieve a duplex polarization effect.
机译：使用简单的蒸汽方法作为填料合成Ag @ TiO 2核 - 壳纳米粒子。基于纳米颗粒，首先通过将Ag @ TiO2纳米颗粒在聚（偏二氟乙烯共六氟丙烯）[P（VDF-HFP）]基质中嵌入Ag @ TiO2纳米颗粒，首先制备P（VDF-HFP）/ Ag @ TiO 2杂化膜。微观和热分析证实，通过TiO 2壳成功涂覆Ag纳米粒子，壳层的厚度约为8-10nm。 Ag @ TiO2纳米粒子充当成核位点，以促进聚合物基质的结晶而不改变其结构。 P（VDF-HFP）/ Ag @ TiO 2复合材料在宽频范围内表现出增强的电介质性能，并且通过在低填料的P（VDF-HFP）基质上增强了聚合物纳米复合材料的介电常数装载10体积％。此外，P（VDF-HFP）/ Ag @ TiO 2还表现出比P（VDF-HFP）/ Ag，P（VDF-HFP）/ TiO2和P（VDF-HFP）/ Ag / TiO2混合物复合材料更高的介电常数保持低损耗切线（低于0.03以1 kHz）以实现双相偏振效应。

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  • 来源
    《RSC Advances》 |2015年第97期|共6页
  • 作者

    Xiao Xingrong; Yang Hui; Xu Nuoxin; Hu Liang; Zhang Qilong;

  • 作者单位

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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