Interface mediated semiconducting to metallic like transition in ultrathin Bi2Se3 films on (100) SrTiO3 grown by molecular beam epitaxy

Debnath Anil K.; Prasad R.; Singh Ajay; Samanta Soumen; Kumar Ashwini; Bohra Anil; Bhattacharya Debarati; Basu Saibal; Joshi Niraj; Aswal Dinesh K.; Gupta S. K.

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Interface mediated semiconducting to metallic like transition in ultrathin Bi2Se3 films on (100) SrTiO3 grown by molecular beam epitaxy

机译：通过分子束外延生长的超薄Bi2Se3薄膜中的半导体介导半导体的半导体介导

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Bismuth selenide (Bi2Se3) thin films of nominal thickness similar to 10 nm were grown on (100) SrTiO3 and (100) LaAlO3 single crystal substrates using molecular beam epitaxy and their charge transport properties were investigated in the temperature range of 1.5 K-300 K. Bi2Se3 films deposited on (100) LaAlO3 exhibit semiconducting behavior, while films prepared on (100) SrTiO3 exhibited an anomalous semiconductor-to-metal-like transition at 68 K. The low temperature metal like transition is attributed to compressive strains arising due to structural phase transition of SrTiO3 substrate, which modulate the Bi2Se3 grain boundary width and facilitate the electric field assisted tunneling of charge carrier at the grain boundaries. The field assisted tunneling of charge carriers is supported by the inverse square-root field dependence of electrical conductivity.

机译：在（100）SrTiO3和（100）使用分子束外延的（100）SRTIO3和（100）LaalO3单晶基质中生长苯甲硒酰胺（Bi2Se3）薄膜，使用分子束外延，在1.5k-300k的温度范围内研究其电荷传输性能。。沉积在（100）LaAlO3上的Bi2Se3膜表现出半导体行为，而在（100）SRTIO3上制备的薄膜在68K上表现出异常的半导体 - 金属状过渡。低温金属如过渡归因于由于所引起的压缩菌株 SRTIO3基板的结构相转变，其调节Bi2Se3晶界宽度，并促进晶界电荷载体的电场辅助隧道。电荷载波的现场辅助隧穿由导电性的逆平方根域的依赖性支持。

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《RSC Advances》 |2015年第107期|共6页
作者
Debnath Anil K.; Prasad R.; Singh Ajay; Samanta Soumen; Kumar Ashwini; Bohra Anil; Bhattacharya Debarati; Basu Saibal; Joshi Niraj; Aswal Dinesh K.; Gupta S. K.;
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Bhabha Atom Res Ctr Tech Phys Div Bombay 400085 Maharashtra India;

Bhabha Atom Res Ctr Tech Phys Div Bombay 400085 Maharashtra India;

Bhabha Atom Res Ctr Tech Phys Div Bombay 400085 Maharashtra India;

Bhabha Atom Res Ctr Tech Phys Div Bombay 400085 Maharashtra India;

Bhabha Atom Res Ctr Tech Phys Div Bombay 400085 Maharashtra India;

Bhabha Atom Res Ctr Tech Phys Div Bombay 400085 Maharashtra India;

Bhabha Atom Res Ctr Div Solid State Phys Bombay 400085 Maharashtra India;

Bhabha Atom Res Ctr Div Solid State Phys Bombay 400085 Maharashtra India;

Sahyadri Coll Engn &

Management Mangalore 575007 Karnataka India;

Bhabha Atom Res Ctr Tech Phys Div Bombay 400085 Maharashtra India;

Bhabha Atom Res Ctr Tech Phys Div Bombay 400085 Maharashtra India;

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中图分类化学;
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1. Interface mediated semiconducting to metallic like transition in ultrathin Bi2Se3 films on (100) SrTiO3 grown by molecular beam epitaxy [J] . Debnath Anil K., Prasad R., Singh Ajay, RSC Advances . 2015,第107期

机译：通过分子束外延生长的超薄Bi2Se3薄膜中的半导体介导半导体的半导体介导
2. In Situ Microfabrication and Measurements of Bi2Se3 Ultrathin Films in a Multichamber System with a Focused Ion Beam, Molecular Beam Epitaxy, and Four-Tip Scanning Tunneling Microscope [J] . Naoya Fukui, Rei Hobara, Toru Hirahara, E-Journal of Surface Science and Nanotechnology . 2014,第1期

机译：带有聚焦离子束，分子束外延和四尖端扫描隧道显微镜的多室系统中Bi2Se3超薄膜的原位微加工和测量
3. Strain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy [J] . Li Bin, Chen Weiguang, Guo Xin, Applied Surface Science . 2017,第PTa2期

机译：分子束外延生长的外延高折射率Bi2Se3（221）薄膜中的应变
4. Properties of molecular beam epitaxy grown Eu_x(transition metal)_y films (transition metals: Mn, Cr) [C] . K. Balin, A. Nowak, A. Gibaud Annual Conference on Magnetism Magnetic Materials . 2011

机译：分子束外延生长Eu_x（过渡金属）_y膜的性质（过渡金属：Mn，Cr）
5. Structural and Magnetic Phase Transitions in Manganese Arsenide Thin-Films Grown by Molecular Beam Epitaxy [D] . Jaeckel, Felix Till 2010

机译：分子束外延生长的砷化锰薄膜的结构和磁相变
6. Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy [O] . Shih-Wei Lin, Yue-Han Wu, Li Chang, 2015

机译：分子束外延生长的渗铝超薄膜中纯电子移相
7. Ultrathin metallic films of Mn, AgMn and VMn grown by molecular beam epitaxy [O] . Liu Chian 1986

机译：分子束外延生长的Mn，AgMn和VMn超薄金属膜

Interface mediated semiconducting to metallic like transition in ultrathin Bi2Se3 films on (100) SrTiO3 grown by molecular beam epitaxy

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