首页> 外文期刊>RSC Advances >Enhanced self-assembled monolayer treatment on polymeric gate dielectrics with ultraviolet/ozone assistance in organic thin film transistors
【24h】

Enhanced self-assembled monolayer treatment on polymeric gate dielectrics with ultraviolet/ozone assistance in organic thin film transistors

机译:在有机薄膜晶体管中具有紫外/臭氧辅助的聚合物栅极电介质上增强的自组装单层处理

获取原文
获取原文并翻译 | 示例
           

摘要

Poly-4-vinylphenol (PVP), cross-linked PVP and poly(methyl methacrylate) (PMMA) are employed as polymeric insulators and chemical vapor deposition (CVD) is utilized to form self-assembled monolayers on the polymeric insulators. With a hexamethyldisilazane monolayer on polymeric dielectrics, an ordered molecular orientation is formed with larger grains resulting in improved carrier mobilities, and low threshold voltages (VT). Moreover, ultraviolet/ozone (UVO) treatment is used to enhance the alignment of HMDS monolayer on polymeric insulator surface and a time dependent effect is observed for UV/ozone treatment. For PVP and cross-linked PVP substrates, a short UVO exposure enhances the HMDS reaction on the polymer surface, and a long UVO exposure shows an adverse effect. On the other hand, PMMA is found to be more sensitive to UVO treatment and displayed performance degradation. These findings will be of value for solution processed insulators for printable electronic applications on flexible substrates.
机译:聚 - 连续的P​​VP和聚(甲基丙烯酸甲酯)(PMMA),用作聚合物绝缘体,化学气相沉积(CVD)用于在聚合物绝缘体上形成自组装单层。随着聚合物的电介质一个六甲基二单层,有序分子取向与从而提高载流子迁移较大的晶粒,和低阈值电压(VT)构成。此外,使用紫外/臭氧(UVO)处理来增强HMDS单层对聚合物绝缘体表面的对准,并且观察到用于UV /臭氧处理的时间依赖性效果。对于PVP和交联的PVP底物,短UVO暴露增强了聚合物表面上的HMDS反应,并且长的UVO暴露显示出不利影响。另一方面,发现PMMA对UVO治疗和显示的性能下降更敏感。这些发现对于解决柔性基板上可打印电子应用的解决方案的溶液的价值是值。

著录项

  • 来源
    《RSC Advances》 |2015年第79期|共7页
  • 作者单位

    City Univ Hong Kong Dept Phys &

    Mat Sci Hong Kong Hong Kong Peoples R China;

    City Univ Hong Kong Dept Phys &

    Mat Sci Hong Kong Hong Kong Peoples R China;

    City Univ Hong Kong Dept Phys &

    Mat Sci Hong Kong Hong Kong Peoples R China;

    City Univ Hong Kong Dept Phys &

    Mat Sci Hong Kong Hong Kong Peoples R China;

    City Univ Hong Kong Dept Phys &

    Mat Sci Hong Kong Hong Kong Peoples R China;

    South Univ Sci &

    Technol China Dept Chem Shenzhen 518055 Peoples R China;

    City Univ Hong Kong Dept Phys &

    Mat Sci Hong Kong Hong Kong Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号