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Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx

机译:氧气和水分在电阻切换Taox和HFOX中的过程和效果

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Foreign components such as dopants and impurities in molecular or ionic form may significantly influence forming/switching processes in redox-based memories. This work presents a systematic study and discussion on effects of oxygen and moisture in Ta2O5 and HfO2 thin films, being two of the most used materials for redox-based resistively switching random access memories. Whereas oxygen is found to not affect the device behavior, the presence of moisture profoundly influences it. It plays a crucial role for the counter electrode reaction, providing additional charged species and enabling the formation of oxygen vacancies, thus determining the forming voltage and the kinetics of this process. Here, methods for incorporation of moisture within the oxide films and its defect chemistry are discussed. Based on the standard electrode potentials and analysis of the electrochemical processes at both electrodes, it is possible to predict their sequence during switching. The difference using symmetric cells with inert electrodes Pt/MeOx/Pt and asymmetric devices with ohmic electrodes Me/MeOx/Pt is explained by the electrochemical reaction sequence and ability of the ohmic electrode to undergo redox reactions. Upon oxidation the Me electrode can either exchange O2- with the oxide or can be a source for cations within the MeOx, keeping the balance between oxygen rich/deficient matrix.
机译:诸如分子或离子形式的掺杂剂和杂质等外来组分可显着影响氧化还原的存储器中的形成/切换过程。这项工作提出了一种系统的研究和讨论Ta2O5和HFO2薄膜中的氧气和水分的影响,是用于氧化还原基的电阻转换随机接入存储器中最常用材料的两个。虽然发现氧气不会影响器件行为,但水分的存在深刻地影响它。它对对电极反应发挥着重要作用,提供额外的带电物种并能够形成氧空位,从而确定该过程的形成电压和动力学。这里,讨论了用于掺入氧化膜内的水分及其缺陷化学的方法。基于两个电极的电化学过程的标准电极电位和分析,可以在切换期间预测其序列。通过电化学反应序列和欧姆电极经历氧化还原反应的电化学反应序列,解释了使用惰性电极Pt / meox / pt和具有欧姆电极/ pt的不对称装置的对称细胞的差异。在氧化时,ME电极可以与氧化物交换O2或可以是Meox内的阳离子的源,保持富氧富含/缺陷的基质之间的平衡。

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