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Nylon fibers as template for the controlled growth of highly oriented single crystalline ZnO nanowires

机译：尼龙纤维作为模板用于高度定向单晶ZnO纳米线的受控生长

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This article reports the first controlled synthesis of large scale continuous arrays of single-crystalline ZnO nanowires with tunable size and properties on nylon fibers using a two-step low-temperature hydrothermal growth strategy. This process involves seed treatment of the substrate with ZnO nanocrystals that will form nucleation sites for subsequent epitaxial growth of single crystalline ZnO nanowires. Well-defined, vertically oriented, highly dense, and uniform ZnO nanowires of the wurtzite crystal structure covering the entirety of the fibers were achieved. In order to study the size and shape-dependent optical and electrochemical properties of the nanowires, the seed-to-growth solution concentration ratio was varied, resulting in hexagonal flat-ended (nanorods) and tapered (nanoneedles) morphologies. The amount of ZnO nanorods and nanoneedles grown on nylon fibers were determined as 30.1 ± 0.5% and 11.4 ± 0.7% ZnO by weight, respectively. In comparison to nanorods, ZnO nanoneedles demonstrated enhanced crystallinity, better orientation along the c-axis, and widened band gap. A similar trend was observed in the UV-vis absorption of nanorods and nanoneedles, the absorption-edge of the latter exhibiting a blue-shift that correlates with the widening of the band gap with nanoneedle formation. Moreover, the surface charge transport properties showed strong dependence on the ZnO morphology in which ZnO nanorods exhibited lower surface charge transfer resistance.
机译：本文报道了使用两步低温水热生长策略在尼龙纤维上首次大规模合成具有可调大小和特性的单晶ZnO纳米线的连续阵列。该过程涉及用ZnO纳米晶体对衬底进行种子处理，该ZnO纳米晶体将形成成核位点，用于随后的单晶ZnO纳米线的外延生长。获得了纤锌矿晶体结构覆盖整个纤维的轮廓分明，垂直定向，高度致密且均匀的ZnO纳米线。为了研究纳米线的尺寸和形状相关的光学和电化学特性，改变了种子与生长溶液的浓度比，从而形成了六边形的平端（nanorods）和锥形（nanoneedles）形态。在尼龙纤维上生长的ZnO纳米棒和纳米针的数量分别确定为ZnO的重量比为30.1±0.5％和11.4±0.7％。与纳米棒相比，ZnO纳米针表现出增强的结晶度，沿c轴的更好取向以及更宽的带隙。在纳米棒和纳米针的紫外可见吸收中观察到类似的趋势，后者的吸收边缘表现出蓝移，其与随着纳米针形成的带隙变宽相关。此外，表面电荷传输性能显示出对ZnO形态的强烈依赖性，其中ZnO纳米棒表现出较低的表面电荷转移阻力。

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