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首页> 外文期刊>Crystal growth & design >The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on cubic Si(001) surface
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The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on cubic Si(001) surface

机译：立方Si（001）表面上自发形成的纤锌矿GaN纳米棒的形状，取向和结构的起源

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摘要

We elucidate the atomistic level details of the formation of 1-D GaN nanostructures on Si(001) by molecular beam epitaxy. In a multitechnique study, we understand the epitaxy and role of the unintentional interfacial SiN_ x layer in determining the shape, structure, and organization of the nanofeatures. The 1-D GaN features are seen to be m-faceted and grow along the Si(111) planes and thus are tilted with a 4-fold symmetry on the cubic Si(100) surface. The interfacial mismatch induced dislocations are shown to provide the nucleation centers for the spiral 1-D growth, while their local density determines their evolution into solid rods, tubes, or c-tubes. The unintentional interfacial nitridation of the substrate forms discontinuous amorphous mounds that provide the epitaxial contact to the substrate and also laterally isolate the rods/tubes, enabling them to grow laterally in their equilibrium hexagonal wurtzite structures. We consolidate the results into a schematic model to unveil the underlying mechanism and demonstrate the subtle relationship between the kinetics of growth and the interfacial properties.
机译：我们阐明了通过分子束外延在Si（001）上形成一维GaN纳米结构的原子级细节。在一项多技术研究中，我们了解了无意界面SiN_x层的外延和作用，决定了纳米特征的形状，结构和组织。一维GaN特征被视为具有m面并且沿着Si（111）平面生长，因此在立方Si（100）表面上以4倍对称性倾斜。界面失配引起的位错显示为螺旋一维生长提供了成核中心，而它们的局部密度决定了它们向固体棒，管或c管的演化。基材的无意界面氮化会形成不连续的无定形土墩，这些土墩提供与基材的外延接触，并且还使杆/管横向隔离，从而使杆/管在其平衡的六角形纤锌矿纤锌矿结构中横向生长。我们将结果整合到一个示意图模型中，揭示了潜在的机理，并证明了生长动力学与界面性质之间的微妙关系。

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