...
首页> 外文期刊>Crystal growth & design >High-quality epitaxy of ruthenium dioxide, RuO_2, on rutile titanium dioxide, TiO2, by pulsed chemical vapor deposition
【24h】

High-quality epitaxy of ruthenium dioxide, RuO_2, on rutile titanium dioxide, TiO2, by pulsed chemical vapor deposition

机译:通过脉冲化学气相沉积法在金红石型二氧化钛TiO2上对二氧化钌RuO_2进行高质量外延

获取原文
获取原文并翻译 | 示例
           

摘要

Pulsed chemical vapor deposition was used to prepare epitaxial ruthenium dioxide (RuO_2) film on rutile TiO_2 (011) at low temperature 280 °C. Reciprocal space mapping by high-resolution X-ray diffraction was used to examine the quality of epitaxy, which demonstrated a high quality epitaxy of the deposited RuO_2 film. The results also showed that the RuO_2 lattice was fully strained by the substrate in the lateral directions and, therefore, distorted from a tetragonal to a monoclinic structure.
机译:采用脉冲化学气相沉积法在低温280°C的金红石型TiO_2(011)上制备外延二氧化钌(RuO_2)薄膜。通过高分辨率X射线衍射进行的倒数空间映射用于检查外延的质量,这表明沉积的RuO_2薄膜具有高质量的外延。结果还表明,RuO_2晶格在横向方向上被基底完全拉紧,因此从四方结构变形为单斜结构。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号