...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Crystal growth & design >Role of impurity on growth hysteresis and oscillatory growth of crystals
【24h】

Role of impurity on growth hysteresis and oscillatory growth of crystals

机译：杂质对晶体生长滞后和振荡生长的作用

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We proposed a simple physical model of growth hysteresis and oscillatory growth in a crystallization system with impurities. The model is based on two fundamental mechanisms: (i) removal of impurities adsorbed on the growing crystal surface by step advancement and (ii) retardation of step advancement by the adsorbed impurities (the pinning mechanism). We found that the coupling of these two mechanisms causes a cyclic feedback on the kinetics of impurity adsorption and step advancement. We revealed a growth hysteresis on the step velocity, namely, the history of the step velocity when the supersaturation is decreased is different from that when the supersaturation is increased. The critical supersaturation at which the growth hysteresis appears is given by definite physical parameters such as step free energy, number density of the adsorbed impurities, and time scale of impurity adsorption. The feedback loop also results in the oscillatory growth of crystals when the transportation of constituent molecules from the bulk environment to the crystal surface is inefficient.
机译：我们提出了一个具有杂质的结晶系统中的生长滞后和振荡生长的简单物理模型。该模型基于两个基本机制：（i）通过逐步推进去除吸附在生长晶体表面上的杂质，以及（ii）吸附的杂质阻碍逐步推进（钉扎机制）。我们发现这两种机制的耦合导致了对杂质吸附和阶跃推进动力学的循环反馈。我们揭示了步进速度的增长滞后现象，即过饱和度降低时的步速历史与过饱和度增加时的步速历史不同。生长迟滞出现时的临界过饱和度由确定的物理参数（例如，阶跃自由能，吸附的杂质的数量密度和杂质吸附的时间尺度）给出。当组成分子从整体环境到晶体表面的传输效率低下时，反馈环路还会导致晶体振荡生长。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号