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GaAs Vertical Gradient Freeze Process Intensification

机译：GaAs垂直梯度冻结工艺强化

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The GaAs vertical gradient freeze (VGF) crystal growth process can be intensified in various ways, e.g., utilizing external fields, scaling up, numbering up the crucibles, etc. Successful application of traveling magnetic fields (TMFs) in 4 in. VGF GaAs growth for the flow control and process acceleration encouraged us to search for synergistic conceptions. Pros and cons of process scale up and numbering up under TMFs were addressed using threedimensional numerical simulations. The comparison of concepts was focused on the control of solid/liquid interface morphology and energy balance. A novel multicrucible furnace design was proposed and compared with a single-crucible design, both based on KRISTMAG technology. The simulation results showed the clear superiority of the numbering-up concept; e.g., the total energy consumption per run with equal yield was reduced to 32% of the value for the standard process. Moreover, a beneficial interface morphology was achievable without a trade-off with growth rates.
机译：GaAs垂直梯度冻结（VGF）晶体的生长过程可以通过各种方式增强，例如，利用外部场，按比例放大，对坩埚进行编号等。在4英寸VGF GaAs生长中成功应用了行进磁场（TMF）流量控制和过程加速鼓励我们寻找协同概念。使用三维数值模拟解决了在TMF下按比例放大和编号的过程的利弊。概念的比较集中在固/液界面形态和能量平衡的控制上。提出了一种新颖的多坩埚炉设计，并将其与基于KRISTMAG技术的单坩埚设计进行了比较。仿真结果表明了编号概念的明显优势。例如，每次运行的总能量消耗相等，则降低到标准流程价值的32％。而且，可以实现有益的界面形态，而无需权衡增长率。

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