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首页> 外文期刊>Crystal growth & design >Epitaxial Growth of n?Tridecane Low-Pressure Phase Filmy Crystal on Its High-Pressure Phase
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Epitaxial Growth of n?Tridecane Low-Pressure Phase Filmy Crystal on Its High-Pressure Phase

机译：正十三烷低压相薄膜晶体在高压相上的外延生长

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摘要

We measured the p?T diagrams of four odd normal alkanes including ntridecane, which have two equilibrium lines on which the orthorhombic (SII) and hexagonal (SI) solids coexist, and the SI and liquid coexist. The equilibrium lines of n-tridecane nearly overlap above 40 °C and separate from each other with temperatures decreasing less than 40 °C. We also show that the metastable area of SII of n-tridecane widely spreads below the SII?SI coexistence line. We focused on the reason why the metastable region of the SII crystal spreads, based on the transformational relationship between SI and SII and the unisotropies among the SI and SII singular interfaces. The SII crystal first appears from the liquid above 40 °C just after compression, due to the narrow stable region of the liquid?SI crystal system. When the temperature and pressure of the liquid?SII crystal system vary compared with those of the wide stable region of the liquid?SI crystal system, the filmy SI crystal can grow on its SII crystal in the liquid. Therefore, the arrangement and the wide area cause the epitaxial growth of SI filmy crystal on SII crystal.
机译：我们测量了包括十三碳烷在内的四种奇数正构烷烃的pΔT图，它们具有两条平衡线，正交线（SII）和六角形（SI）固体共存，SI和液体共存。正十三烷的平衡线在40°C以上几乎重叠，并且在温度降低到40°C以下时彼此分开。我们还表明，正十三烷的SII亚稳区域广泛分布在SII？SI共存线以下。我们基于SI和SII之间的转换关系以及SI和SII奇异界面之间的各向异性，集中讨论了SII晶体的亚稳区域扩展的原因。由于液化SI晶体系统的狭窄稳定区域，刚压缩后，SII晶体首先从高于40℃的液体中出现。当液态SII晶体系统的温度和压力与液态SI硅晶体系统的宽稳定区域的温度和压力相比变化时，薄膜状SI晶体可以在液体中的SII晶体上生长。因此，该排列和宽的面积导致SI薄膜晶体在SII晶体上外延生长。

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