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首页> 外文期刊>Advanced materials interfaces >3D Hierarchical Gallium Oxynitride Nanostructures Decorated with Ag Nanoparticles Applied as Recyclable Substrates for Ultrasensitive SERS Sensing
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3D Hierarchical Gallium Oxynitride Nanostructures Decorated with Ag Nanoparticles Applied as Recyclable Substrates for Ultrasensitive SERS Sensing

机译：3D用Ag纳米颗粒装饰为可回收基板的3D层次镓纳米结构用于超声敏感的SERS传感

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Developing plasmon-assisted semiconductor nanocomposites as multifunctional surface-enhanced Raman scattering (SERS) substrate for detection as well as photodegradation of toxic organic pollutants appears to be a crucial step in upgrading the SERS technique to a quantitative analytical level. However, conventional photocatalytic semiconductor scaffolds are confined in ultraviolet-light-active metal oxide nanostructures (TiO2, ZnO, etc.). Herein, the scope of semiconductor scaffold is expanded to visible-light-active oxynitrides by developing a robust and ultrasensitive recyclable SERS substrate based on 3D hierarchical gallium oxynitrides (GaON) nanosheets loading with Ag nanoparticles (Ag NPs). Significantly, the bandgap of GaON nanosheets shrinks to 2.9 eV to enable visible-light adsorption. The as-fabricated SERS substrate shows a high sensitivity with enhancement factor of 5.2 x 10(7) in R6G detection, and yields a wide detection range of 1.0 x 10(-6) -1.0 x 10(-12) mol L-1. Assisted with the enhanced charge transfer by generating the Schottky contact at the metal/semiconductor interface and the electron traps played by the residue oxygen, the Ag/GaON nanocomposites show attractive recyclability at visible-light irradiation with well-maintained SERS activity after four cycles. This work demonstrates the superiority of taking advantage of plasmon-assisted oxynitride semiconductors as a high-performance SERS platform and provides new opportunities for developing robust visible-light-driven recyclable SERS substrates.
机译：显影等离子体辅助半导体纳米复合材料作为多功能表面增强拉曼散射（SERS）底物用于检测，以及有毒有机污染物的光降解似乎是将SERS技术提升到定量分析水平的关键步骤。然而，常规的光催化半导体支架被限制在紫外线 - 光活性金属氧化物纳米结构（TiO 2，ZnO等）中。这里，半导体支架的范围通过基于3D分层氧氮化镓（Gaon）纳米液用Ag纳米颗粒（Ag NPS）的载荷载荷而膨胀到可见光活性的氧氮化物。值得注意的是，Gaon Nanosheets的带隙缩小到2.9eV以使可见光吸附。制造的SERS衬底显示R6G检测中的5.2×10（7）的增强因子高灵敏度，并产生1.0×10（-6）-1.0×10（-12）Mol L-1的宽检测范围。通过在金属/半导体界面产生肖特基接触和残留氧播放的电子捕集器来辅助增强电​​荷转移，Ag / Gaon纳米复合材料在可见光照射下显示出在四个循环后的可见光照射下具有良好的可抵抗力。这项工作展示了利用等离子体辅助氮氧化物半导体作为高性能SERS平台的优越性，为开发稳健的可见光驱动的可回收柱基板提供新的机会。

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