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首页> 外文期刊>Advanced materials interfaces >Ultralow Specific Contact Resistivity in Metal-Graphene Junctions via Contact Engineering
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Ultralow Specific Contact Resistivity in Metal-Graphene Junctions via Contact Engineering

机译：通过联系工程，Ultralow特定接触电阻率在金属 - 石墨烯交界处

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摘要

A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact. Specific contact resistivity is reduced from 1372 Omega mu m for a device with surface contacts to 456 Omega mu m when contacts are patterned with holes. Electrostatic doping of the graphene further reduces contact resistivity from 519 to 45 Omega mu m, a substantial decrease of 91%. The experimental results are supported and understood via a multiscale numerical model, based on density functional theory calculations and transport simulations. The data are analyzed with regards to the edge perimeter and hole-to-graphene ratio, which provides insights into optimized contact geometries. The current work thus indicates a reliable and reproducible approach for fabricating low resistance contacts in graphene devices. A simple guideline for contact design that can be exploited to guide graphene and 2D material contact engineering is provided.
机译：提供了对石墨烯缘触点的系统研究。在接触区域处有意图案地图案化单层石墨烯产生明确的边缘触点，其导致来自金接触的电流喷射的67％增强。当用孔图案化时，对于具有表面触点的装置，对于具有表面触点的装置，从1372Ωmum降低，从1372Ωmum减小。石墨烯的静电掺杂进一步降低了519至45孔μm的接触电阻率，大幅减少为91％。基于密度泛函理论计算和运输仿真，通过多尺度数值模型支持和理解实验结果。关于边缘周长和孔到石墨烯比分析数据，该孔与石墨烯比为优化的接触几何形状提供洞察力。因此，目前的工作表明了用于制造石墨烯装置中的低电阻触点的可靠和可重复的方法。提供了可以利用以引导石墨烯和2D材料接触工程的触点设计的简单准则。

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