机译:半导体绝缘体 - 半导体异质结中的界面氧化物厚度的生成控制
Ilse Katz Institute for Nanoscale Science and TechnologyBen‐Gurion University of the NegevBe'er Sheva 8410501 Israel;
Ilse Katz Institute for Nanoscale Science and TechnologyBen‐Gurion University of the NegevBe'er Sheva 8410501 Israel;
Ilse Katz Institute for Nanoscale Science and TechnologyBen‐Gurion University of the NegevBe'er Sheva 8410501 Israel;
Department of PhysicsNuclear Research Center NegevP.O. Box 9001 Be'er Sheva Israel;
Ilse Katz Institute for Nanoscale Science and TechnologyBen‐Gurion University of the NegevBe'er Sheva 8410501 Israel;
Ilse Katz Institute for Nanoscale Science and TechnologyBen‐Gurion University of the NegevBe'er Sheva 8410501 Israel;
Ilse Katz Institute for Nanoscale Science and TechnologyBen‐Gurion University of the NegevBe'er Sheva 8410501 Israel;
Ilse Katz Institute for Nanoscale Science and TechnologyBen‐Gurion University of the NegevBe'er Sheva 8410501 Israel;
chemical bath deposition; heterojunction; oxide thickness; semiconductor–insulator–semiconductor; postgrowth;
机译:半导体绝缘体 - 半导体异质结中的界面氧化物厚度的生成控制
机译:界面电荷对薄氧化半导体绝缘体半导体和金属绝缘体半导体器件的电子亲和力,功函数和电特性的影响
机译:Al_2O_3金属-绝缘体-半导体电容器中栅极/绝缘体-界面偶极子控制的电流传导
机译:使用原位同步辐射照射的高迁移率半导体对氧化物/金属的互通电子表征及与界面电性能的相关性
机译:在纳米晶体金属氧化物半导体上的光诱导界面仿生催化。
机译:用导数光谱法确定溶胶-氧化凝胶半导体中绝缘体到半导体的跃迁
机译:原子层沉积前体步骤重复和表面等离子体预处理对半导体-绝缘体-半导体异质结太阳能电池的影响
机译:具有快速生长的超薄siO2栅极绝缘体的mOs(金属氧化物半导体)器件的界面和击穿特性。