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首页> 外文期刊>Crystal growth & design >Ultrafast Crystallization of Ce0.9Zr0.1O2-y Epitaxial Films on Flexible Technical Substrates by Pulsed Laser Irradiation of Chemical Solution Derived Precursor Layers
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Ultrafast Crystallization of Ce0.9Zr0.1O2-y Epitaxial Films on Flexible Technical Substrates by Pulsed Laser Irradiation of Chemical Solution Derived Precursor Layers

机译:化学溶液衍生的前驱体层的脉冲激光辐照在柔性技术基底上的Ce0.9Zr0.1O2-y外延膜超快结晶

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摘要

The epitaxial growth of Ce0.9Zr0.1O2-y (CZO) thin-films on yttria-stabilized zirconia (YSZ) (001) single crystal and YSZ (001)/stainless steel (YSZ/SS) technological substrates is investigated by pulsed laser irradiation of solution-derived ceriumzirconium precursor layers using a UV Nd:YAG laser source at atmospheric conditions. The influence of laser processing parameters on the morphological and structural properties of the obtained films is studied by atomic force and transmission electron microscopies, as well as X-ray diffractometry. The analyses performed demonstrate that laser treatments enable the epitaxial growth of tens of nanometers thick CZO films with a crystallization kinetic process several orders of magnitude faster than that of conventional thermal annealing. Fully epitaxial films are attained using stainless steel (SS) flexible tapes as a substrate. Even though photochemical mechanisms are not fully discarded, it is concluded that photothermal processes are the main contribution responsible for the fast epitaxial crystallization.
机译:通过脉冲激光研究了在氧化钇稳定的氧化锆(YSZ)(001)单晶和YSZ(001)/不锈钢(YSZ / SS)工艺衬底上Ce0.9Zr0.1O2-y(CZO)薄膜的外延生长在大气条件下使用UV Nd:YAG激光源辐照溶液衍生的铈锆前体层。通过原子力和透射电子显微镜以及X射线衍射法研究了激光加工参数对所得薄膜的形态和结构性能的影响。进行的分析表明,激光处理能够以几十倍的结晶动力学过程外延生长数十纳米厚的CZO膜,而结晶动力学过程的速度比常规热退火快了几个数量级。使用不锈钢(SS)柔性胶带作为基材可获得完全外延的薄膜。即使光化学机理没有完全消除,但可以得出结论,光热过程是快速外延结晶的主要贡献。

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