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Buffer-facilitated epitaxial growth of ZnO nanowire

机译:缓冲剂促进的ZnO纳米线的外延生长

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摘要

This study introduces a new train of thought regarding the growth of well-arrayed nanowires. To reduce how defects such as grain boundary affect subsequent growth of the nanowires, the epitaxial buffer layer should be carefully chosen. The titanium nitride (TiN) buffer layer facilitates the growth not only of the arrays but also the epitaxy of zinc oxide (ZnO) nanowires, even given a lattice mismatch of up to 8.35% and the entirely different crystal structures between them.
机译:这项研究介绍了有关排列良好的纳米线生长的新思路。为了减少诸如晶界之类的缺陷如何影响纳米线的后续生长,应谨慎选择外延缓冲层。氮化钛(TiN)缓冲层不仅促进了阵列的生长,而且促进了氧化锌(ZnO)纳米线的外延,即使给出的晶格失配高达8.35%以及它们之间完全不同的晶体结构也是如此。

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