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Influence of Gassing Crystallization Parameters on Induction Time and Crystal Size Distribution

机译:放气结晶参数对诱导时间和晶体尺寸分布的影响

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摘要

Gassing in combination with linear cooling profiles is an innovative technology to induce nucleation and control product properties. Previous work found that among gassing parameters like gassing supersaturation, gassing duration, and gas volume flow, gassing supersaturation has an effect on product properties only. This paper investigates why gassing duration and volume flow cannot be used to control product properties. Therefore, the influence of gassing parameters on induction time and final crystal size distributions were evaluated. Experiments were performed using succinic acid/water as model system in a 1 L crystallizer. Compared to normal cooling crystallization, induction time could be reduced by about 60 min by gassing. The difference in the specific bubble surface areas during gassing with the gas volume flows applied was too low to create an effect on the amount of nuclei induced and thus on induction time. Only gassing at different supersaturations resulted in different amounts of nuclei induced and thus affected induction time and crystal size distributions. Varying gassing duration did not change induction time, indicating that nuclei were induced at the beginning of the gassing period only.
机译:结合线性冷却曲线进行排气是一项创新技术,可诱导形核并控制产品性能。先前的工作发现,在放气过饱和,放气持续时间和气体体积流量等放气参数中,放气过饱和仅对产品性能产生影响。本文研究了为什么不能使用放气时间和体积流量来控制产品性能。因此,评估了放气参数对感应时间和最终晶体尺寸分布的影响。实验是在1 L结晶器中使用琥珀酸/水作为模型系统进行的。与常规冷却结晶相比,放气可以将诱导时间减少约60分钟。在放气期间,所施加的气体体积流量下的气泡比表面积之差太小,以至于不影响诱导核的数量,从而影响诱导时间。仅在不同的过饱和下放气会导致不同数量的核诱导,从而影响诱导时间和晶体尺寸分布。改变放气时间不会改变诱导时间,这表明核仅在放气周期开始时被诱导。

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