...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>ACS Sustainable Chemistry & Engineering >Porous Silicon Preparation by Electrochemical Etching in Ionic Liquids
【24h】

Porous Silicon Preparation by Electrochemical Etching in Ionic Liquids

机译：多孔硅通过离子液体中的电化学蚀刻制备

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Anodic etching of n-type {111} silicon in ionic liquid (IL) systems ([RMIM] [X], R = H, Bu; X = BF4-, PF6-), realized under galvanostatic conditions and at room temperature, allowed the formation of porous silicon surfaces with different pore morphology depending on the etching time, current density, and the IL used. The study of the effect of water content in IL on the etching process has shown a water content of 1% to be optimal. The role of the anion on the etching process was elucidated using 1-methylimidazolium tetrafluoroborate ([HMIM][BF4]) and 1-methylimidazolium hexafluorophosphate ([HMIM] [PF6]) IL systems. [HMIM] [BF4] was found to be most efficient for the formation of a silicon nanostructured array with a pore size of 30-80 nm. The thusprepared porous silicon samples show fluorescence in blue light (475 nm). The NMR spectra of [HMIM] [BF4] ionic liquid before and after etching do not show noticeable changes, which makes it possible to consider this IL as a potentially recyclable etching agent.
机译：在离子液体（IL）系统中的n型{111}硅的阳极蚀刻（[RMIM] [X]，R = H，BU; x = BF4-，PF6-），在Galvanostatic条件下和室温下实现，允许根据蚀刻时间，电流密度和使用的IL，形成多孔硅表面具有不同孔形态的多孔硅表面。对IL对蚀刻过程中的水含量的影响的研究显示出1％的含水量为最佳。使用1-甲基咪唑鎓四氟硼酸盐（[Hmim] [BF4]）和1-甲基咪唑鎓六氟磷酸（六氟磷酸钠（[HMIM] [PF6]）IL系统，阐明了阴离子对蚀刻工艺的作用。发现[Hmim] [BF4]最有效地形成硅纳米结构阵列，孔径为30-80nm。如此准备的多孔硅样品在蓝光（475nm）中显示出荧光。在蚀刻之前和之后的[HMIM] [BF4]离子液体的NMR光谱不会显示出明显的变化，这使得可以将该IL视为可能可回收的蚀刻剂。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号