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首页> 外文期刊>Crystal growth & design >High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy
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High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy

机译：连续模式金属有机气相外延法制备具有非极性侧壁的高纵横比GaN Fin微结构。

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摘要

Three-dimensional GaN micro- and nanorods with a high aspect ratio have recently gained substantial interest in light-emitting diode research, due to their reduced defect density, their nonpolar sidewalls, and their increased active area. Here, we present an alternative geometry for high aspect ratio three-dimensional nanostructures: vertically standing GaN "walls", so-called GaN fins. With high aspect ratios, these GaN fins exhibit the same interesting characteristics as their rod counterparts mentioned above. Beyond that, because of their geometry, the respective material analysis and device processing can be expected to be less complex. We are able to demonstrate the highly reproducible selective area growth of these fins by continuous mode metalorganic vapor phase epitaxy. Fin heights of more than 50 mu m (aspect ratios of nearly 14) could be achieved, and growth rates are as high as 22.8 mu m/h in the beginning of the growth. The sidewalls are smooth nonpolar <11<(2)over bar>0> a-planes, suitable for optoelectronic devices due to the missing quantum-confined Stark effect and less edge effects compared to rods. We investigate the influence of pattern orientation and geometry on the fin morphology. Moreover, the influence of silane flow, which is known to enhance the vertical growth rate, and other growth parameters are systematically explored.
机译：具有高深宽比的三维GaN微米和纳米棒由于降低了缺陷密度，减少了非极性侧壁并增加了有效面积，最近在发光二极管研究中引起了广泛兴趣。在这里，我们为高深宽比的三维纳米结构提供了一种替代的几何形状：垂直站立的GaN“壁”，即所谓的GaN鳍片。这些GaN鳍具有高的长宽比，具有与上述棒状对应件相同的有趣特性。除此之外，由于它们的几何形状，可以预期相应的材料分析和设备处理不会那么复杂。我们能够通过连续模式的金属有机气相外延来证明这些鳍片的高度可重复的选择性生长。翅片高度可以达到50微米以上（纵横比接近14），并且在开始生长时的生长速度就高达22.8微米/小时。侧壁是光滑的非极性<11 <（2）over abar> 0> a平面，由于缺少量子限制的Stark效应且与杆相比边缘效应较小，因此适合光电器件。我们研究了图案方向和几何形状对鳍形的影响。此外，系统地研究了已知会提高垂直生长速率的硅烷流动的影响以及其他生长参数。

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