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首页> 外文期刊>Crystallography reports >Specific Features of Distribution and Relaxation of Elastic Stresses in Homoepitaxial CVD Films of Germanium and Diamond
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Specific Features of Distribution and Relaxation of Elastic Stresses in Homoepitaxial CVD Films of Germanium and Diamond

机译:锗和钻石同源腔CVD薄膜弹性应力分布及松弛的具体特征

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摘要

The real structures of epitaxial CVD films of germanium and diamond have been comparatively analyzed. The influence of the specific features of elastic-stress distribution in two-layer structures on the relaxation processes and dislocation distribution are considered. The influence of inhomogeneous (over thickness) plastic deformation, caused by the motion of dislocations under alternating elastic-stress field, on the formation of residual bending of substrates and films is shown by the example of epitaxial germanium structures. A significant difference in the relaxation processes in CVD films of diamond and germanium (crystallographic analog of diamond) is revealed.
机译:锗和金刚石外延CVD薄膜的真实结构已经相对较浅。 考虑了在弛豫过程和脱位分布上的两层结构中弹性应力分布的特定特征的影响。 通过外延锗结构的实施例示出了由交替弹力场在交替弹性场下的脱位运动引起的不均匀(过度)塑性变形的影响。 揭示了金刚石和锗(金刚石晶晶晶晶态)CVD薄膜中松弛过程的显着差异。

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  • 来源
    《Crystallography reports》 |2019年第3期|共6页
  • 作者单位

    Russian Acad Sci Shubnikov Inst Crystallog Fed Sci Res Ctr Crystallog &

    Photon Moscow 119333 Russia;

    Russian Acad Sci Shubnikov Inst Crystallog Fed Sci Res Ctr Crystallog &

    Photon Moscow 119333 Russia;

    Bauman Moscow State Tech Univ Kaluga Branch Kaluga 248004 Russia;

    Russian Acad Sci Prokhorov Gen Phys Inst Moscow 119991 Russia;

    Russian Acad Sci Prokhorov Gen Phys Inst Moscow 119991 Russia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
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