Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions

Lomov A. A.; Myakonkikh A. V.; Chesnokov Yu. M.; Shemukhin A. A.; Oreshko A. P.

首页> 外文期刊>Crystallography reports >Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions

【24h】

Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions

机译：在高剂量植入氦离子下形成的内部多孔硅层的互补研究

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The surface layers of Si(001) substrates subjected to plasma-immersion implantation of helium ions with an energy of 2-5 keV and a dose of 5 x 10(17) cm(-2) have been investigated using high-resolution X-ray reflectivity, Rutherford backscattering, and transmission electron microscopy. The electron density depth profile in the surface layer formed by helium ions is obtained, and its elemental and phase compositions are determined. This layer is found to have a complex structure and consist of an upper amorphous sublayer and a layer with a porosity of 30-35% beneath. It is shown that the porous layer has the sharpest boundaries at a lower energy of implantable ions.

机译：使用高分辨率X-研究了对具有2-5keV的能量为2-5keV的氦离子的溶液浸没氦离子的底物的表面层和剂量为5×10（-2）的剂量。射线反射率，Rutherford反向散射和透射电子显微镜。得到由氦离子形成的表面层中的电子密度深度分布，并测定其元素和相组合物。发现该层具有复杂的结构并且由上部非晶层和孔隙率下方的层组成。结果表明，多孔层具有在植入离子的较低能量下具有最小的边界。

著录项

来源
《Crystallography reports》 |2017年第2期|共6页
作者
Lomov A. A.; Myakonkikh A. V.; Chesnokov Yu. M.; Shemukhin A. A.; Oreshko A. P.;
展开▼
作者单位

Russian Acad Sci Inst Phys &

Technol Moscow 117218 Russia;

Russian Acad Sci Inst Phys &

Technol Moscow 117218 Russia;

Kurchatov Inst Natl Res Ctr Moscow 123182 Russia;

Moscow MV Lomonosov State Univ Moscow Russia;

Moscow MV Lomonosov State Univ Moscow Russia;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词

相似文献

外文文献
中文文献
专利

1. Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions [J] . Lomov A. A., Myakonkikh A. V., Chesnokov Yu. M., Crystallography reports . 2017,第2期

机译：在高剂量植入氦离子下形成的内部多孔硅层的互补研究
2. Formation of Nanocrystalline Silicon Films Using High-Dose H~+ Ion Implantation into Silicon-on-Insulator Layers with Subsequent Rapid Thermal Annealing [J] . I. E. Tyschenko, V. P. Popov, A. B. Talochkin, Semiconductors . 2004,第1期

机译：使用大剂量H〜+离子注入绝缘体上硅层并随后进行快速热退火来形成纳米晶硅膜
3. Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films [J] . Feklistov K. V., Cherkov A. G., Popov V. P., Semiconductors . 2018,第13期

机译：通过ER和SiO2表面膜通过ER和SiO 2形成的高剂量氩气形成铒和氧气反冲原子的再分布和硅薄表面层的结构
4. FTIR spectroscopy and spectroscopic ellipsometry study of nanocrystalline layers formed by high-dose hydrogen and deuterium implantation of silicon [C] . L. N. Safronov, E. V. Spesivtsev, V. P. Popov, Materials Research Society Symposium . 2001

机译：通过高剂量氢和硅氘形成的纳米晶体层的FTIR光谱和光谱椭圆形研究
5. Ballistic electron emission microscopy and internal photoemission study on metal bi-layer/oxide/silicon, high-k oxide/silicon, and "end-on" metal contacts to vertical silicon nanowires. [D] . Cai, Wei. 2010

机译：金属双层/氧化物/硅，高k氧化物/硅以及垂直硅纳米线的“端对端”金属触点的弹道电子发射显微镜和内部光发射研究。
6. Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching [O] . Yijie Li, Nguyen Van Toan, Zhuqing Wang, 2021

机译：用金属辅助化学蚀刻形成高掺杂多孔Si层的硅衬底的形成与评价
7. Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon [O] . Serre Christophe, Pérez Rodríguez Alejandro, Romano Rodríguez Alberto, 1995

机译：高剂量碳离子注入硅中形成的相的光谱表征
8. Studies of High-Dose Ion Implantation in Silicon. [R] . Tsai, M. Y. 1978

机译：硅中高剂量离子注入的研究。

Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions

摘要

著录项

相似文献

相关主题

期刊订阅