Epitaxy of CdTe on Sapphire Substrates with Titanium Buffer Layers

Muslimov A. E.; Butashin A. V.; Kanevsky V. M.; Babaev V. A.; Alikhanov N. M. -R.

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Epitaxy of CdTe on Sapphire Substrates with Titanium Buffer Layers

机译：用钛缓冲层的蓝宝石衬底上的Cdte外延

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The formation of a developed electrical relief on the sapphire substrate surface is investigated. A technique is proposed for introducing Ti4+ impurity atoms into the sapphire crystal lattice by depositing titanium layers with a thickness of about 5 nm and their annealing in air (oxidizing atmosphere) to a temperature of 1400 degrees C. It is shown that this preliminary treatment of the sapphire substrate surface results in epitaxial growth of (111) CdTe films parallel to the sapphire (0001) plane at a temperature of 350 degrees C.

机译：研究了在蓝宝石衬底表面上形成的显影释放。提出了一种技术，通过将厚度为约5nm的钛层沉积在空气（氧化气氛）的温度为1400℃的温度下，将Ti 4 +杂质原子引入蓝宝石晶格中。结果表明，这表明这种初步处理蓝宝石衬底表面导致在350℃的温度下平行于蓝宝石（0001）平面的（111）CdTe膜的外延生长。

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《Crystallography reports》 |2017年第3期|共5页
作者
Muslimov A. E.; Butashin A. V.; Kanevsky V. M.; Babaev V. A.; Alikhanov N. M. -R.;
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Russian Acad Sci Fed Res Ctr Crystallog &

Photon Shubnikov Inst Crystallog Moscow 119333 Russia;

Russian Acad Sci Fed Res Ctr Crystallog &

Photon Shubnikov Inst Crystallog Moscow 119333 Russia;

Russian Acad Sci Fed Res Ctr Crystallog &

Photon Shubnikov Inst Crystallog Moscow 119333 Russia;

Dagestan State Univ Makhachkala 367000 Russia;

Dagestan State Univ Makhachkala 367000 Russia;

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正文语种 eng
中图分类晶体学;
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1. Epitaxy of CdTe on Sapphire Substrates with Titanium Buffer Layers [J] . Muslimov A. E., Butashin A. V., Kanevsky V. M., Crystallography reports . 2017,第3期

机译：用钛缓冲层的蓝宝石衬底上的Cdte外延
2. High-quality A1N epitaxy on sapphire substrates with sputtered buffer layers [J] . Lisheng Zhang, Fujun Xu, Mingxing Wang, Superlattices and microstructures . 2017,第may期

机译：蓝宝石衬底上具有溅射缓冲层的高质量AlN外延
3. Effect of Refined Nitridation of Sapphire Substrates in Hydride Vapor Phase Epitaxy: Definite Correlation of Structural Characteristics between a Low-Temperature-Grown Buffer Layer and a Subsequent High-Temperature-Grown Layer of GaN [J] . Lee HJ, Ha JS, Lee HJ, Journal of the Korean Physical Society . 2009,第6期

机译：氢化物气相外延中蓝宝石衬底细化氮化的影响：GaN的低温生长缓冲层与随后的高温生长层之间结构特征的明确关联
4. The Growth of (001)-Oriented CeO_2 Buffer Layers on R-Cut Sapphire Substrates for the Epitaxy of TI-2212 Superconducting Films [C] . Mingxian Chen, Xinjie Zhao, Yanling Jiang International Conference on Applied Engineering, Materials and Mechanics . 2018

机译：用于Ti-2212超导膜的外延的R切割蓝宝石衬底上的（001）的CEO_2缓冲层的生长
5. TEM characterization of gallium nitride/sapphire interface and the buffer layer on sapphire substrate by MOCVD. [D] . Shea, Brian Daniel. 2001

机译：氮化镓/蓝宝石界面和蓝宝石衬底上缓冲层的TEM表征通过MOCVD。
6. Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate [O] . Hoki Son, Ye-ji Choi, Soon-Ku Hong, 2021

机译：卤化物气相外延在锥形截肢型蓝宝石衬底上生长的α-GA2O3癫痫脱位的减少
7. Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy [O] . Sochinskii, N. V., Muñoz Sanjosé, Vicente, Espeso, J. I., 1997

机译：通过气相外延在CdTe衬底上生长的Hg1-xCdxI2层中的结构缺陷
8. Evaluation of the Feasibility and the Cost of HgCdTe Epitaxial Layers Grown by Molecular Beam Epitaxy on CdTe, CdZnTe and GaAs Substrates. [R] . Faurie, J. P. 1991

机译：分子束外延生长HgCdTe外延层在CdTe，CdZnTe和Gaas衬底上的可行性和成本评估。

Epitaxy of CdTe on Sapphire Substrates with Titanium Buffer Layers

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