Determination of the Thermodynamic Parameters of Doping Silicon by Means of Thermomigration

Kuznetsov V. V.; Rubtsov E. R.; Seredin B. M.

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Determination of the Thermodynamic Parameters of Doping Silicon by Means of Thermomigration

机译：通过热迁移测定掺杂硅的热力学参数

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The effect of the Al-Ga melt composition on the mass transfer processes occurring during silicon recrystallization has been investigated by the thermomigration method. The threshold temperatures of thermomigration onset are determined. The kinetic regularities of liquid zone thermomigration, related to the recrystallization temperature and liquid phase composition, are established. The silicon solubility is studied in wide ranges of temperature and Al-Ga melt composition. The results obtained are analyzed within the simple-solution model. Based on the experimental data on solubility, the parameters of interatomic interaction between components in the liquid phase are determined. The liquidus surface for the Si-Al-Ga ternary system is built in wide temperature and composition ranges. The results of studying the structural quality and electrical properties of recrystallized silicon layers are reported.

机译：通过热迁移法研究了Al-Ga熔融组合物对在硅再结晶期间发生的传质过程的影响。确定了热迁移发作的阈值温度。建立了与重结晶温度和液相组成相关的液区热迁移的动力学规则。在宽的温度和Al-Ga熔融组合物中研究了硅溶解度。在简单溶液模型中分析所得结果。基于对溶解度的实验数据，确定了液相中的组分之间的内部组分相互作用参数。 Si-Al-Ga三元系统的液相表面是在宽温度和组成范围内构建的。研究了研究重结晶硅层的结构质量和电性能的结果。

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《Crystallography reports》 |2018年第7期|共5页
作者
Kuznetsov V. V.; Rubtsov E. R.; Seredin B. M.;
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St Petersburg State Electrotech Univ ETU St Petersburg 197376 Russia;

St Petersburg State Electrotech Univ ETU St Petersburg 197376 Russia;

Platov South Russian State Polytech Univ Novocherkassk 346428 Russia;

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正文语种 eng
中图分类晶体学;
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Determination of the Thermodynamic Parameters of Doping Silicon by Means of Thermomigration

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