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Growth of High Crystalline Quality HVPE-GaN Crystals with Controlled Electrical Properties

机译:具有受控电性能的高质量高质量HVPE-GaN晶体的生长

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Thick free-standing hydride vapor phase epitaxy (HE) GaN wafers were grown with close to perfect crystalline quality and with more than two orders of magnitude reduced free carrier concentration relative to ammonothermal GaN without resorting to deep level compensation. These new homoepitaxially grown crystals exceed the quality of any commercially available GaN substrates. High crystalline quality is confirmed by XRD rocking curve measurements having full width at half-maximum of only 16 arc s. Detailed Raman scattering spectroscopy and imaging show that the wafers are biaxially stress-free and have a uniform and low background doping. The stress-free, flat nature of these substrates is essential for high-yield device fabrication. High-resolution photoluminescence studies in combination with SIMS analysis identify Si and 0 as residual shallow donors with concentration levels orders of magnitude lower than those present in ammonothermal GaN substrates.
机译:较厚的自立氢化物气相外延(HE)GaN晶片生长时具有接近完美的晶体质量,并且相对于氨热GaN而言,其自由载流子浓度降低了两个数量级以上,而无需借助深能级补偿。这些新的同质外延生长晶体超过了任何市售GaN衬底的质量。 XRD摇摆曲线测量结果证实了高结晶质量,其半峰全宽仅为16弧秒。详细的拉曼散射光谱学和成像表明,晶片没有双轴应力,并且具有均匀且低背景掺杂。这些基板的无应力,平坦特性对于高产量的器件制造至关重要。高分辨率光致发光研究与SIMS分析相结合,确定了Si和0是残留的浅施主,其浓度水平比非热氮化GaN衬底中的浓度低几个数量级。

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