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首页> 外文期刊>Crystal growth & design >Nanoparticles to Nanoholes: Fabrication of Porous GaN with Precisely Controlled Dimension via the Enhanced GaN Decomposition by Au Nanoparticles
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Nanoparticles to Nanoholes: Fabrication of Porous GaN with Precisely Controlled Dimension via the Enhanced GaN Decomposition by Au Nanoparticles

机译：纳米粒子到纳米孔：通过Au纳米粒子增强的GaN分解，可精确控制尺寸的多孔GaN的制备

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摘要

Porous GaN exhibits unique optoelectronic, chemical, and physical properties such as shift of band gap, increased surface area ratio, excellent chemical, mechanical, and thermal stability as well as efficient luminescence as compared to its bulk counterpart. Herein, we demonstrate a precise, efficient, and still cost-effective method of the fabrication of porous GaN through the enhanced GaN decomposition by using Au nanoparticles (NPs) as a catalyst, in which the size, density, and shape of the pores (nanoholes, NHs) can be precisely controlled. By the thermal annealing assisted with the Au NPs, the NHs are successfully fabricated, and the existence of Au NPs significantly accelerate the GaN decomposition at the interface between the NPs and GaN due to the Ga absorption by the Au NPs. We systematically study the formation mechanism of NHs assisted by the Au NPs by means of annealing temperature, duration, and Au deposition amount, and the results are systematically analyzed and discussed.
机译：与块状GaN相比，多孔GaN具有独特的光电，化学和物理特性，例如带隙偏移，表面积比增加，优异的化学，机械和热稳定性以及有效的发光。本文中，我们展示了一种精确，有效且仍具有成本效益的方法，该方法通过使用金纳米颗粒（NPs）作为催化剂通过增强的GaN分解来增强GaN分解来制造多孔GaN，其中孔的尺寸，密度和形状（纳米孔（NHs）可以精确控制。通过Au NPs辅助的热退火，成功地制备了NHs，并且由于Au NPs吸收了Ga，Au NPs的存在显着加速了在NPs和GaN之间的界面处的GaN分解。我们通过退火温度，持续时间和金沉积量系统地研究了金纳米颗粒辅助的NHs的形成机理，并对结果进行了系统的分析和讨论。

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