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首页> 外文期刊>AEU: Archiv fur Elektronik und Ubertragungstechnik: Electronic and Communication >Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET for improved gate leakages, analysis of circuit and noise performance
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Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET for improved gate leakages, analysis of circuit and noise performance

机译：浅扩展工程双层材料围绕闸门（见DM-SG）MOSFET，用于改进闸门泄漏，电路分析和噪声性能分析

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摘要

The leakages in off state, particularly Gate Induced Drain Leakage (GIDL) has been addressed and reduced by proposing a Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET. The shallow extensions create an insulating layer, which acts as a diffusion stopper and thereby suppresses the off state leakages. It is done by comparing the off-state performance of SEE-DM-SG MOSFET with Dual Metal Surrounding Gate (DM-SG) MOSFET and Surrounding Gate (SG) MOSFET. GIDL current is being reduced to an order of 10(-12) A. Drain Induced Barrier Lowering (DIBL) has been curtailed to a greater extent in SEE-DM-SG MOSFET when compared with DM-SG MOSFET and SG MOSFET. GIDL has been extensively investigated for different drain voltages and temperatures; in order to study their impact on it. It was so found that GIDL was minimal for SEE-DM-SG MOSFET under different bias and temperature conditions. Arrhenius plot has also been plotted and deeply investigated as it instigates the GIDL activation energy (E-A). It has been so found that SEE-DM-SG MOSFET poses higher EA and thereby suggests minimal BTBT (Band To Band Tunneling). So as to enhance the device applicability for low noise amplifier, the noise performance of SEE-DM-SG MOSFET has also been deeply investigated. Noise conductance (NC) and Noise Figure (NF) have been significantly curtailed in SEE-DM-SG MOSFET over DM-SG and SG MOSFET. A CMOS inverter has also been designed using SEE-DM-SG MOSFET and the output characteristics have also been compared for the aforesaid device architectures and higher Noise Margin has been observed in SEE-DM-SG MOSFET, making it more immune to noise. (C) 2019 Elsevier GmbH. All rights reserved.
机译：通过提出浅伸展工程双层材料（参见DM-SG）MOSFET，已经解决和降低了OFF状态，特别是栅极感应漏极泄漏（GID1）的泄漏。浅延伸延伸产生绝缘层，其用作扩散止动件，从而抑制关闭状态泄漏。通过比较DM-SG MOSFET与双金属周围栅极（DM-SG）MOSFET和周围栅极（SG）MOSFET的脱离状态性能进行了完成的。 GIDL电流降低到10（-12）A的顺序。与DM-SG MOSFET和SG MOSFET相比，漏极感应屏障降低（DIBL）在跷跷板MOSFET中被缩小到DM-SG MOSFET。 GIDL已被广泛调查不同的排水电压和温度;为了研究他们对它的影响。因此，它发现在不同的偏压和温度条件下看到DM-SG MOSFET的GIDL最小。由于它煽动GIDL激活能量（E-A），也绘制并深入研究了Arrhenius图。已经发现，SEE-DM-SG MOSFET姿势更高，从而表明最小的BTBT（频带到带隧道）。从而提高设备适用性低噪声放大器，SEE-DM-SG MOSFET的噪声性能也得到了深入研究。在DM-SG和SG MOSFET上，噪音电导（NC）和噪声系数（NF）被显着缩减了DM-SG MOSFET。 CMOS逆变器还使用SEE-DM-SG MOSFET设计，并且还比较了上述设备架构的输出特性，并且在SEE-DM-SG MOSFET中观察到更高的噪声裕度，使其更加免受噪音。 （c）2019年Elsevier GmbH。版权所有。

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