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首页> 外文期刊>Crystal growth & design >Statistical Analysis of the Shape of One-Dimensional Nanostructures: Determining the Coalescence Degree of Spontaneously Formed GaN Nanowires
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Statistical Analysis of the Shape of One-Dimensional Nanostructures: Determining the Coalescence Degree of Spontaneously Formed GaN Nanowires

机译：一维纳米结构形状的统计分析：确定自发形成的GaN纳米线的聚结度

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摘要

Single GaN nanowires formed spontaneously on a given substrate represent nanoscopic single crystals free of any extended defects. However, due to the high area density of thus formed GaN nanowire ensembles, individual nanowires coalesce with others in their immediate vicinity. This coalescence process may introduce strain and structural defects, foiling the idea of defect-free material due to the nanowire geometry. To investigate the consequences of this process, a quantitative measure of the coalescence of nanowire ensembles is required. We derive objective criteria to determine the coalescence degree of GaN nanowire ensembles. These criteria are based on the area?perimeter relationship of the cross-sectional shapes observed and in particular on their circularity. Employing these criteria, we distinguish single nanowires from coalesced aggregates in an ensemble, determine the diameter distribution of both, and finally analyze the coalescence degree of nanowire ensembles with increasing fill factor.
机译：在给定基板上自发形成的单个GaN纳米线代表无任何扩展缺陷的纳米级单晶。然而，由于如此形成的GaN纳米线集合体的高面积密度，单个纳米线在其紧邻处与其他纳米线结合。这种合并过程可能会引入应变和结构缺陷，从而由于纳米线的几何形状而挫败了无缺陷材料的想法。为了研究此过程的后果，需要定量测量纳米线团聚的程度。我们得出客观的标准来确定GaN纳米线集成体的聚结程度。这些标准基于观察到的横截面形状的面积与周长的关系，尤其是基于其圆度。利用这些标准，我们将单个纳米线与集合中的聚集体区分开，确定两者的直径分布，最后分析随着填充因子增加而纳米线集合体的聚结程度。

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