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首页> 外文期刊>Crystal growth & design >Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate
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Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

机译：氮化铝（0001）/蓝宝石衬底上磷化硼的外延

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摘要

The boron phosphide (BP) semiconductor has many remarkable features, including high thermal neutron capture cross section of the B-10 isotope, making it attractive for neutron detection applications. Effective and efficient neutron detection require BP to also have high crystal quality with optimum electrical properties. Here, we present the heteroepitaxial growth of high quality BP films on a superior aluminum nitride(0001)/sapphire substrate by chemical vapor deposition. The effect of process variables on crystalline and morphological properties of BP was examined in detail. BP deposited at high temperatures and high reactant flow rate ratios produced films with increased grain size and improved crystalline orientation. Narrower full width at half-maximum values of BP Raman peaks (6.1 cm(-1)) and omega rocking curves (352 arcsec) compared to values in the literature confirm the high crystalline quality of produced films. The films were n-type with the highest electron mobility of 37.8 cm(2)/V.s and lowest carrier concentration of 3.15 x 10(18) cm(-3). Rotational twinning in BP due to degenerate epitaxy caused by 3-fold BP(111) on 6-fold AlN(0001) was confirmed by synchrotron white beam X-ray topography. This preliminary study showed that AlN is an excellent substrate for growing high quality BP epitaxial films with promising potential for further enhancement of BP properties.
机译：磷化硼（BP）半导体具有许多显着特征，包括B-10同位素的高中子俘获截面，使其对中子检测应用具有吸引力。有效和高效的中子检测需要BP同时具有高晶体质量和最佳电性能。在这里，我们介绍了通过化学气相沉积在优质氮化铝（0001）/蓝宝石衬底上高质量BP膜的异质外延生长。详细检查了工艺变量对BP晶体和形态特性的影响。在高温和高反应物流量比下沉积的BP产生的薄膜具有增加的晶粒尺寸和改善的晶体取向。与文献中的值相比，在BP拉曼峰（6.1 cm（-1））和ω摇摆曲线（352 arcsec）的一半最大值处，较窄的全宽证实了所生产薄膜的高结晶质量。该膜是n型，具有37.8 cm（2）/V.s的最高电子迁移率和3.15 x 10（18）cm（-3）的最低载流子浓度。通过同步加速器白光束X射线形貌证实了由于3倍BP（111）对6倍AlN（0001）引起的简并外延导致的BP旋转孪生。这项初步研究表明，AlN是生长高质量BP外延膜的极佳基材，并有望进一步增强BP性能。

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