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Direct synthesis of superhydrophobic silica nanowires surface by evaporating ZnS on silicon wafer

机译:通过在硅片上蒸发ZnS直接合成超疏水二氧化硅纳米线表面

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摘要

Silica nanowires (SiO2-NWs) were successfully synthesized on a large scale by direct thermal evaporation of ZnS powder on silicon wafer at 1350 degrees C. The special geometric morphology induced a high surface roughness (root-mean-square) of several hundreds of nanometers. After functionalization with perfluoroalkysilane (FAS), the SiO2-NWs surface showed a superhydrophobic property with the highest water contact angle greater than 148 degrees. The uneven surface with high roughness and the generated C-F chains by chemical modification contributed to the improved superhydrophobicity. The superhydrophobic SiO2-NWs surface can be applied as a self-cleaning material to remove dirty particles in many fields.
机译:通过在1350摄氏度下直接热蒸发ZnS粉末在硅片上成功地大规模合成了二氧化硅纳米线(SiO2-NWs)。特殊的几何形态引起了数百纳米的高表面粗糙度(均方根) 。用全氟烷基硅烷(FAS)官能化后,SiO2-NWs表面表现出超疏水性能,最高水接触角大于148度。具有高粗糙度的不平坦表面和通过化学改性产生的C-F链有助于改善的超疏水性。超疏水性SiO2-NWs表面可用作自清洁材料,以去除许多领域中的脏颗粒。

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