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Realization of vertically well-aligned ZnO : Ga nanorods by magnetron sputtering and their field emission behavior

机译：磁控溅射实现垂直良好取向的ZnO：Ga纳米棒及其场发射行为

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report catalyst-free growth of one-dimensional Ga-doped ZnO nanorod arrays on (001) Si substrate with a thin buffer layer by magnetron sputtering. The diameter and length of the nanorods are in the range of 90-144 nm and about 1.38 mu m, with an aspect ratio nearly 12:1 and deviation angle +/- 6 degrees between the [0001](ZnO) direction and substrate normal. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission. The good field emission properties of the nanorod arrays with turn-on field of 2.9 V/mu m and enhancement factor of 2027 demonstrate the perfect single-crystalline growth of ZnO:Ga nanorods with similar vertical alignment.
机译：报告了通过磁控溅射在具有薄缓冲层的（001）Si衬底上无催化剂生长一维Ga掺杂的ZnO纳米棒阵列。纳米棒的直径和长度在90-144 nm范围内，约为1.38μm，长径比接近12：1，[0001]（ZnO）方向与基板法线之间的偏角+/- 6度。纳米棒的光致发光光谱以强烈的近带边发射和弱的深能级发射为主导。纳米棒阵列的良好场发射特性具有2.9 V /μm的导通场和2027的增强因子，显示了具有相似垂直排列的ZnO：Ga纳米棒的完美单晶生长。

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