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Simple processing of ZnO from solution: Homoepitaxial film and bulk single crystal

机译：从溶液中简单处理ZnO：同质外延膜和块状单晶

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摘要

The system LiCl-ZnCl2-K2CO3 is employed to fabricate homoepitaxial (0001) ZnO films by liquid phase epitaxy (LPE). The effect of ZnO concentration in the solution on the microstructure of the film is analyzed. Transition of growth modes was observed, evolving from island growth at < 2 mmol of ZnO per 1 mol of LiCl over columnar growth (free-standing columns at 2.5 +/- 0.5 mmol, porous film at 3.5 +/- 0.5 mmol, and fully coalesced film at 5 mmol of ZnO) to step-flow growth at 12 0.5 mmol of ZnO. Single-crystalline films, X-ray full-width half-maximum (FWHM) of 25 arcsec for (0002) reflection, with steps propagating over macroscopic dimensions were fabricated in the concentration range 12.5-14 mmol of ZnO. A structural quality factor (SQF) was introduced for joint description of both surface roughness and X-ray crystallinity. SQF is highest for films grown at 13 mmol of ZnO. Doping with bi-, tri- and tetravalent cationic additives yields ZnO films, the luminescent characteristics of which are investigated in comparison to low-alkaline hydrothermal ZnO. Hydrothermal synthesis under subcritical conditions at <= 150 degrees C has been investigated as a fast tool for doping of thermodynamically stable ZnO. Low-temperature luminescence is compared to hydrothermal bulk ZnO crystal grown under supercritical conditions.
机译：LiCl-ZnCl2-K2CO3系统用于通过液相外延（LPE）制备同质外延（0001）ZnO薄膜。分析了溶液中ZnO浓度对薄膜微观结构的影响。观察到生长模式的转变，从柱形生长（每1摩尔LiCl中<2 mmol ZnO小于2 mmol ZnO的岛形生长）演变成柱状生长（2.5 +/- 0.5 mmol的独立柱，3.5 +/- 0.5 mmol的多孔膜，并完全在5 mmol的ZnO上聚结成膜，然后在12 0.5 mmol的ZnO上逐步流动。在12.5-14 mmol的ZnO浓度范围内，制备了单晶膜，其X射线全宽半最大值（FWHM）为25弧秒，用于（0002）反射，并在宏观尺度上传播了台阶。引入了结构品质因数（SQF）来共同描述表面粗糙度和X射线结晶度。对于在13 mmol的ZnO下生长的薄膜，SQF最高。掺杂二价，三价和四价阳离子添加剂可制得ZnO薄膜，与低碱性水热ZnO相比，可研究其发光特性。已经研究了在亚临界条件下（<= 150摄氏度）进行水热合成，作为掺杂热力学稳定的ZnO的快速工具。将低温发光与在超临界条件下生长的水热块状ZnO晶体进行了比较。

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