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Synthesis, characterization, and electrical properties of SiCN nanowires

机译:SiCN纳米线的合成,表征和电性能

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摘要

SiCN nanowires are prepared by pyrolysis of hexamethyldisilazane using ferrocene as a catalyst precursor with or without thiophene, at 1100 degrees C in a flowing Ar atmosphere. The SiCN nanowires are about 10-60 nm in diameter and on the millimeter scale in length. The addition of thiophene is found to be effective in promoting the growth of SiCN nanowires. A vapor-liquid-solid growth mechanism of the nanowires is proposed. Electrical resistivity of a single SiCN nanowire is measured at room temperature for the first time.
机译:通过使用二茂铁作为催化剂前体,在有或没有噻吩的情况下,在流动的Ar气氛中,通过六甲基二硅氮烷的热解来制备SiCN纳米线。所述SiCN纳米线的直径为约10-60nm,长度为毫米级。发现添加噻吩可有效促进SiCN纳米线的生长。提出了纳米线的气-液-固生长机制。第一次在室温下测量单条SiCN纳米线的电阻率。

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