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Microscopic Topography of Heterocrystal Interfaces

机译:杂晶界面的微观形貌

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Real-time in situ atomic force microscopy (AFM) of the (010) and (001) planes of isomorphous [1,4-bis(amidinium)benzene](2)M(CN)(6)center dot 8H(2)O (M = Fe, Ru) crystals, known to exhibit growth of one of the metalate compounds on the other to produce "core-shroud" heterocrystals, reveals high-fidelity epitaxial growth during heterocrystal formation or roughened surfaces, depending on the crystal face and crystallization conditions. The roughened crystal surfaces that define the interface between heteroepitaxial layers under typical growth conditions are consistent with the interface structure observed by electron dispersive spectrometry, which indicated intermixing of the two materials throughout a 0.7 mu m thick inter-facial region, but could not distinguish between various possible mechanisms for the intermixing. The crystal topography and roughness under various conditions reveal that the intermixing zone observed during heterocrystal formation may be a consequence of a rough growth surface on the inner "core" crystal upon evaporation of solvent prior to immersion in the growth medium used for epitaxial crystallization of the second compound. These observations suggest that the roughness of the growth interface can be regulated using specific growth protocols that minimize the intermixing of the two compounds.
机译:同构[1,4-双(ami)苯](2)M(CN)(6)中心点8H(2)的(010)和(001)平面的实时原位原子力显微镜(AFM) O(M = Fe,Ru)晶体,已知一种会在另一种金属化合物上生长以产生“核壳”异质晶体,在异质晶体形成或表面粗糙化过程中,高保真外延生长,具体取决于晶体面和结晶条件。在典型的生长条件下,定义异质外延层之间界面的粗糙晶体表面与通过电子分散光谱法观察到的界面结构一致,这表明两种材料在整个0.7微米厚的界面区域内混合在一起,但无法区分各种可能的混合机制。在各种条件下的晶体形貌和粗糙度表明,在异晶形成过程中观察到的混合区可能是内部“核心”晶体上的粗糙生长表面的结果,该表面在溶剂蒸发后浸没在用于外延结晶的生长介质中。第二化合物。这些观察结果表明,可以使用特定的生长方案来调节生长界面的粗糙度,该方案可使两种化合物的混合最小化。

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