Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates

Krishnan Bharat; Thirumalai Rooban Venkatesh K. G.; Koshka Yaroslav; Sundaresan Siddarth; Levin Igor; Davydov Albert V.; Merrett J. Neil

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Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates

机译：4H-SiC衬底上生长的SiC纳米线中与衬底有关的取向和多型性控制

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SiC nanowires were grown on monocrystalline 4H-SiC wafers by chemical vapor deposition using the vapor-liquid-solid growth mode. The growth direction of the nanowires was dictated by the crystallographic orientation of the 4H-SiC substrates. Two distinct types of nanowires were obtained. The first type crystallized in the 3C polytype with the ?111? nanowire axes. These nanowires grew at 20o with respect to the substrate c-planes and exhibited high densities of stacking faults on those {111} planes that are parallel to the substrate c-planes. The second type featured the 4H structure albeit with a strong stacking disorder. The stacking faults in these nanowires were perpendicular to the [0001] nanowire axes. Possible growth mechanisms that led to the formation of 3C and 4H polytypes are discussed.

机译：通过使用气-液-固生长模式的化学气相沉积法，在单晶4H-SiC晶片上生长SiC纳米线。纳米线的生长方向取决于4H-SiC衬底的晶体学取向。获得了两种不同类型的纳米线。第一种在3C多晶型中结晶，带有“ 111”。纳米线轴。这些纳米线相对于衬底c平面以20o的速度生长，并且在平行于衬底c平面的{111}平面上表现出高密度的堆垛层错。第二种类型具有4H结构，尽管具有很强的堆叠障碍。这些纳米线中的堆垛层错垂直于[0001]纳米线轴。讨论了导致3C和4H多型形成的可能的生长机制。

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《Crystal growth & design》 |2011年第2期|共4页
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Krishnan Bharat; Thirumalai Rooban Venkatesh K. G.; Koshka Yaroslav; Sundaresan Siddarth; Levin Igor; Davydov Albert V.; Merrett J. Neil;
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1. Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates [J] . Krishnan Bharat, Thirumalai Rooban Venkatesh K. G., Koshka Yaroslav, Crystal growth & design . 2011,第2期

机译：4H-SiC衬底上生长的SiC纳米线中与衬底有关的取向和多型性控制
2. Temperature effects for GaN films grown on 4H-SiC substrate with 4 degrees miscutting orientation by plasma-assisted molecular beam epitaxy [J] . Susanto Iwan, Kan Ken-Yuan, Yu Ing-Song Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2017,第期

机译：在4H-SiC衬底上生长的GaN膜的温度效应，等离子体辅助分子束外延具有4摄氏度的误导式取向
3. Effects of N/Ga flux ratio on GaN films grown on 4H-SiC substrate with 4 degrees miscutting orientation by plasma-assisted molecular beam epitaxy [J] . Susanto Iwan, Tsou Tsung-Han, Yang Zu-Po, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2017,第期

机译：等离子体辅助分子束外延4次误导取向对4H-SiC衬底生长的GaN薄膜的影响
4. SiC nanowires grown on 4H-SiC substrates by chemical vapor deposition [C] . Bharat Krishnan, Siva Kotamraju, Siddarth Sundaresan, Silicon carbide and related materials 2009 . 2010

机译：通过化学气相沉积法在4H-SiC衬底上生长的SiC纳米线
5. Orientation controllable epitaxial vapor-liquid-solid semiconductor nanowire synthesis on Silicon substrate [D] . Chung, Sung Hwan 2013

机译：硅衬底上取向可控的外延气液固半导体纳米线合成
6. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition [O] . Shuxian Cai, Zhonghua Liu, Ni Zhong, 2015

机译：乙烯化学气相沉积法生长压力对4H-SiC衬底上生长的外延石墨烯的影响
7. 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication [O] . Onojima N, Suda J, Kimoto T, 2003

机译：通过多型复制在4H-SiC（11（2）-bar0）衬底上生长的4H-多型AlN
8. Investigation of Defects in Epitaxial 3C-SiC, 4H-SiC and 6H-SiC Films Grown on SiC Substrates [R] . Powell, J. A., Neudeck, P. G., Larkin, D. J., 1993

机译：siC衬底上生长的外延3C-siC，4H-siC和6H-siC薄膜缺陷的研究

Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates

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