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首页> 外文期刊>Crystal growth & design >3C-SiC heteroepitaxial growth by vapor-liquid-solid mechanism on patterned 4H-SiC substrate using Si-Ge melt
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3C-SiC heteroepitaxial growth by vapor-liquid-solid mechanism on patterned 4H-SiC substrate using Si-Ge melt

机译：通过气液固机理在4H-SiC衬底上使用Si-Ge熔体进行3C-SiC异质外延生长

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摘要

In this work, we report on the use of patterned 4H-SiC(0001) substrates for the heteroepitaxial growth of 3C-SiC by vapor-liquid-solid (VLS) mechanism using Ge_(50)Si_(50) melt. Mesas structures of various size and shape were obtained by standard photolithography and dry etching processes. On the temperature range investigated 1300-1450 °C, 3C-SiC deposit was obtained on top and outside the mesas. Some lateral enlargement of these mesas was observed, but it was systematically homoepitaxial. The lateral growth rate was found rather low compared to other techniques like chemical vapor deposition, with a maximum value of ～12 μm/h. In addition, elimination of twin boundaries (TBs) inside the 3C-SiC deposit on top of the mesas was observed in the temperature range of 1400-1450 °C and for specific mesa shape or orientation of the sidewalls. The best case for eliminating these TBs was found to be with initially circular mesas, which spontaneously form well orientated hexagonal facets and then lead to TB-free deposit on top after VLS growth.
机译：在这项工作中，我们报告了通过使用Ge_（50）Si_（50）熔体的气液固（VLS）机理，将图案化的4H-SiC（0001）衬底用于3C-SiC的异质外延生长。通过标准的光刻和干法蚀刻工艺获得了各种尺寸和形状的台面结构。在1300-1450°C的温度范围内，在台面顶部和外部获得了3C-SiC沉积物。观察到这些台面有一些横向扩大，但系统上是同质外延的。与化学气相沉积等其他技术相比，横向生长速率较低，最大值为〜12μm/ h。此外，在1400-1450°C的温度范围内以及侧壁的特定台面形状或方向上，观察到了台面顶部3C-SiC沉积内部孪晶边界（TBs）的消除。发现消除这些结核的最佳情况是最初为圆形台面，其自发形成取向良好的六角形小平面，然后在VLS生长后在顶部形成无结核的沉积物。

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