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首页> 外文期刊>Crystal growth & design >CuInS2 flower vaselike nanostructure arrays on a Cu tape substrate by the copper indium sulfide on Cu-tape (CISCuT) method: Growth and characterization
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CuInS2 flower vaselike nanostructure arrays on a Cu tape substrate by the copper indium sulfide on Cu-tape (CISCuT) method: Growth and characterization

机译:铜带上的硫化铜铟(CISCuT)法在铜带基体上的CuInS2花瓶状纳米结构阵列:生长与表征

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摘要

CuInS2 flower vaselike nanostructure arrays were successfully prepared for the first time on Cu-tape substrates by a facile copper indium sulfide on Cu-tape (CISCuT) method without using any template or catalyst. The sulfurization time and the thickness of the In layer deposited on the Cu-tape were the influential factors for obtaining single phase, well-crystalline, nanostructured CuInS2. Formation of the CuInS2 flower vaselike nanostructures was initiated by a self-catalyzed vapor-liquid-solid (VLS) technique, whereas the vapor-solid (VS) process played a crucial role in defining the shapes of the nanoflower vases. Optical reflectance and Raman spectroscopy were adopted to characterize the CuInS2 flower vaselike nanostructures.
机译:在不使用任何模板或催化剂的情况下,通过简便的铜带上硫化铜铟(CISCuT)方法,在铜带基材上首次成功制备了CuInS2花瓶状纳米结构阵列。硫化时间和沉积在铜带上的In层的厚度是获得单相,结晶良好的纳米结构CuInS2的影响因素。 CuInS2花瓶状纳米结构的形成是通过自催化气液固(VLS)技术开始的,而气固(VS)过程在定义纳米花瓶的形状方面起着至关重要的作用。采用光反射和拉曼光谱表征CuInS2花瓶状纳米结构。

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