Growth of Crystalline TiO2 by Plasma Enhanced Chemical Vapor Deposition

Borras A; Sanchez-Valencia JR; Widmer R; Rico VJ; Justo A; Gonzalez-Elipe AR

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Growth of Crystalline TiO2 by Plasma Enhanced Chemical Vapor Deposition

机译：等离子体增强化学气相沉积法生长二氧化钛晶体

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TiO2 thin films in the form of anatase have been prepared by plasma enhanced chemical vapor deposition (PECVD) at 523 K as the substrate temperature and a low working pressure. The study of the microstructure and texture of the films at different stages of deposition show that their growth follows the Kolmogorov's model developed to describe the evolution of crystalline films from a saturated homogeneous medium. An additional characteristic feature of the growth process by PECVD is the formation of different crystalline domains, particularly at low deposition rates. The effects of this parameter and of the characteristics of the substrate on the growing process are also addressed.

机译：锐钛矿形式的TiO2薄膜已经通过等离子体增强化学气相沉积（PECVD）在523 K作为基材温度和低工作压力的条件下制备。对薄膜在不同沉积阶段的微观结构和织构的研究表明，它们的生长遵循Kolmogorov模型的发展，该模型用于描述晶体薄膜从饱和均相介质的演化。通过PECVD进行的生长过程的另一个特征是形成不同的晶畴，特别是在低沉积速率下。还讨论了该参数和基材特性对生长过程的影响。

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来源
《Crystal growth & design》 |2009年第6期|共9页
作者
Borras A; Sanchez-Valencia JR; Widmer R; Rico VJ; Justo A; Gonzalez-Elipe AR;
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正文语种 eng
中图分类晶体学;
关键词
NANOCOMPOSITE THIN-FILMS; TITANIUM-DIOXIDE; LOW-TEMPERATURE;

机译：纳米复合薄膜;二氧化钛;低温;

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1. Growth of Crystalline TiO2 by Plasma Enhanced Chemical Vapor Deposition [J] . Borras A, Sanchez-Valencia JR, Widmer R, Crystal growth & design . 2009,第6期

机译：等离子体增强化学气相沉积法生长二氧化钛晶体
2. The use of optical microscopy to examine crystallite nucleation and growth in thermally annealed plasma enhanced chemical vapor deposition and hot wire chemical vapor deposition a-Si:H films [J] . A. H. Mahan, M. S. Dabney, R. C. Reedy Jr, Journal of Applied Physics . 2012,第10期

机译：使用光学显微镜检查热退火等离子体增强化学气相沉积和热线化学气相沉积a-Si：H膜中的晶体成核和生长
3. Preparation of nano-crystalline diamond films on poly-crystalline diamond thick films by microwave plasma enhanced chemical vapor deposition [J] . Xiong L., Wang J., Man W., Plasma Science & Technology . 2010,第3期

机译：微波等离子体增强化学气相沉积法在多晶金刚石厚膜上制备纳米晶金刚石膜
4. Growth of hydrogenated nano-crystalline silicon (nc-Si:H) films by plasma enhanced chemical vapor deposition (PE-CVD) [C] . Ashok Jadhavar, Amit Pawbake, Ravindra Waykar International Conference on Energy and Power . 2017

机译：等离子体增强化学气相沉积（PE-CVD）氢化纳米晶体硅（NC-Si：H）膜的生长（PE-CVD）
5. Plasma-enhanced chemical vapor deposition of crystalline diamond films. [D] . Etemadi, Peyman. 2002

机译：等离子体增强的化学气相沉积结晶金刚石薄膜。
6. Growth of Multiorientated Polycrystalline MoS2 Using Plasma-Enhanced Chemical Vapor Deposition for Efficient Hydrogen Evolution Reactions [O] . Na Liu, Jeonghun Kim, Jeonghyeon Oh, 2020

机译：多过多层多晶MOS2使用等离子体增强的化学气相沉积的生长以获得有效的氢气进化反应
7. Growth of Hydrogenated Nano-crystalline Silicon (nc-Si:H) Films by Plasma Enhanced Chemical Vapor Deposition (PE-CVD) [O] . Ashok Jadhavar, Amit Pawbake, Ravindra Waykar, 2017

机译：等离子体增强化学气相沉积（PE-CVD）氢化纳米晶体硅（NC-Si：H）膜的生长（PE-CVD）

Growth of Crystalline TiO2 by Plasma Enhanced Chemical Vapor Deposition

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