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Pressure-induced growth of carbon tetrachloride solid II in solid Ib

机译：压力诱导的固体Ib中四氯化碳固体II的生长

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摘要

This paper describes the change in equilibrium forms of solid II of carbon tetrachloride as functions of temperature and pressure. The crystal was grown by increasing pressure using a diamond anvil cell (DAC). After a single crystal of the solid Ib was prepared from the liquid in the DAC under high pressure, the crystal grew and filled the compressed region of the DAC. Further compression of the DAC resulted in the growth of the solid II in the solid Ib. In the shape of the crystal II, hexagonal shapes appeared. This crystal shape varied from thick hexagonal plates to thin ones with increasing temperature and pressure. This variation was consistent for the anisotropy of the monoclinic unit cell predicted from the molecular arrangement in the unit cell. We may therefore be able to describe the morphology of the molecular crystals of which a molecule has a high symmetry.
机译：本文描述了四氯化碳固体II平衡形式随温度和压力的变化。使用金刚石砧盒（DAC）通过增加压力来生长晶体。在高压下由DAC中的液体制备固体Ib的单晶后，晶体长大并充满了DAC的压缩区域。 DAC的进一步压缩导致固体IIb中固体II的生长。在晶体II的形状中，出现了六边形形状。随着温度和压力的增加，这种晶体形状从厚的六角形板到薄的六角形板不等。从单晶胞的分子排列预测的单斜晶胞的各向异性中，这种变化是一致的。因此，我们可能能够描述分子具有高度对称性的分子晶体的形态。

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