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首页> 外文期刊>Advanced Science Letters >Designing and Simulation of Optoelectronic Devices Using Synopsys TCAD
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Designing and Simulation of Optoelectronic Devices Using Synopsys TCAD

机译：使用Synopsys TCAD设计和仿真光电子设备

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Virtual fabrication of Edge Emitting diode laser is done and presented with the help of Synopsys TCAD's tools. InP is tested as an active medium for laser with AlGaAs. Heterojunctions were used to make separate confinement heterostructure (SCH) and a quantum well. Influence of temperature was studied on various parameters of the device like threshold current and efficiency. Simulation was done using many models including mobility, drift-diffusion, Auger and SRH recombinations etc. to extract the characteristic curve of the device. Low threshold current of 0.38 mA was achieved at room temperature having low power in the near-infrared region. It was also observed that temperature has negative effect on threshold current and efficiency of the device.
机译：在Synopsys TCAD的工具的帮助下，完成了边缘发射二极管激光器的虚拟制造并进行了介绍。 InP已作为AlGaAs激光器的活性介质进行了测试。异质结用于制造单独的约束异质结构（SCH）和量子阱。研究了温度对器件各种参数的影响，例如阈值电流和效率。使用包括迁移率，漂移扩散，俄歇和SRH重组等在内的许多模型进行了仿真，以提取器件的特性曲线。在室温下在近红外区域中具有低功率，可实现0.38 mA的低阈值电流。还观察到温度对器件的阈值电流和效率有负面影响。

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