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首页> 外文期刊>Advanced Science Letters >Strong Narrow-Band Luminescence from Silicon-Vacancy Color Centers in Spatially Localized Sub-10 nm Nanodiamond
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Strong Narrow-Band Luminescence from Silicon-Vacancy Color Centers in Spatially Localized Sub-10 nm Nanodiamond

机译：硅空位色域在空间局部化的低于10 nm纳米金刚石中的强窄带发光。

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摘要

Discrete nanodiamond particles of 500 nm and 6 nm average size were seeded onto silicon substrates and plasma treated using chemical vapor deposition to create silicon-vacancy color centers. The resulting narrowband room temperature photoluminescence is intense, and readily observed even for weakly agglomerated sub-10 nm size diamond. This is in contrast to the well-studied nitrogen-vacancy center in diamond which has luminescence properties that are strongly dependant on particle size, with low probability for incorporation of centers in sub-10 nm crystals. We suggest the silicon-vacancy center to be a viable alternative to nitrogen-vacancy defects for use as a biomarker in the clinically-relevant sub-10 nm size regime, for which nitrogen defect-related luminescent activity and stability is reportedly poor.
机译：将平均大小为500 nm和6 nm的离散纳米金刚石粒子播种到硅基板上，并使用化学气相沉积进行等离子体处理，以创建硅空位色心。所得的窄带室温光致发光很强，即使对于弱聚集的10 nm以下的钻石也很容易观察到。这与经过充分研究的金刚石中的氮空位中心相反，氮中心空位中心的发光特性强烈依赖于粒度，而中心掺入低于10 nm晶体的可能性很小。我们建议将硅空位中心作为氮空位缺陷的可行替代方法，以在与临床相关的10 nm以下尺寸范围内用作生物标记，据报道，氮空位缺陷的发光活性和稳定性很差。

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