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首页> 外文期刊>Electrochemistry communications >Liquid electrolyte-free electrochemical oxidation of GaN surface using a solid polymer electrolyte toward electrochemical mechanical polishing
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Liquid electrolyte-free electrochemical oxidation of GaN surface using a solid polymer electrolyte toward electrochemical mechanical polishing

机译：使用固体聚合物电解质对电化学机械抛光的液体电解质电化学氧化GaN表面

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摘要

Gallium nitride and related materials possess advantageous physical and electrical characteristics for use in high-power/frequency devices and optoelectronics. However, surface preparation of GaN, such as oxidizing and etching, remains difficult owing to its superior chemical and thermal stability compared to conventional semiconductor materials. Thus, high-temperature treatment or ultraviolet irradiation is required to process the GaN surface. Here, we report a novel electrochemical approach for the oxidization of GaN surface using solid polymer electrolyte (SPE), which provides a room-temperature surface treatment free from liquid electrolyte and UV irradiation. The electrochemical system composed of GaN/SPE/cathode can effectively oxidize the GaN surface (similar to 80 nm, 10 min) in the presence of H2O molecules via a reaction with hydroxyl radicals (OH%) generated on the SPE membrane. While the surface shows rough and porous features after the removal of oxide by dipping in an alkaline solution, post-oxidation polishing using CeO2 particles removes the oxide film to produce a smooth GaN surface, which demonstrates the potential of oxidation/polishing for GaN wafer fabrication processes.
机译：氮化镓和相关材料具有有利的物理和电气特性，用于高功率/频率装置和光电子。然而，由于与常规半导体材料相比，由于其优越的化学和热稳定性，GaN的表面制备仍然困难。因此，需要高温处理或紫外线照射来处理GaN表面。这里，我们报告了一种使用固体聚合物电解质（SPE）氧化GaN表面的新型电化学方法，该电解质提供了室温表面，不含液体电解质和UV辐射。由GaN / SPE /阴极组成的电化学系统可以通过与在SPE膜上产生的羟基自由基（OH％）的反应有效地将GaN表面（类似于80nm，10分钟）氧化在H2O分子中。虽然表面在通过浸入碱性溶液中除去氧化物之后的表面显示粗糙和多孔特征，但是使用CeO 2颗粒的后氧化抛光去除氧化膜以产生光滑的GaN表面，这证明了GaN晶片制造的氧化/抛光的电位。流程。

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