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首页> 外文期刊>Electrochemistry communications >Interpretation f Potential Transients during Aluminum Etch Tunnel Growth in the Presence of Sulfuric Acid
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Interpretation f Potential Transients during Aluminum Etch Tunnel Growth in the Presence of Sulfuric Acid

机译:在硫酸存在下铝蚀刻隧道生长期间的解释F电位瞬变

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摘要

When sulfuric acid is added in an etching solution of 1 M hydrochloric acid, the effect of the sulfate ions on the aluminum etch pit formation and tunnel growth was investigated with the morphology study and current interruptions in applied etching current. Initial potential transient supports that sulfate ion works a film forming agent and inhibits the pit initiation during the anodic current etching. Observation of ruptured oxide films suggests that cathodic hydrogen evolution can take place inside the pits. Current step reduction and cathodic pulse superimposition experiments indicate that the actively dissolving tunnel tip surface is covered with aluminum chloride salts and sulfate ion moves far behind inside tunnels during the tunnel growth.
机译:当在1M盐酸的蚀刻溶液中加入硫酸时,通过施加蚀刻电流的形态研究和电流中断,研究了硫酸盐离子对铝蚀刻坑形成和隧道生长的影响。 初始电位瞬态支持硫酸根离子效应成膜剂并抑制阳极电流蚀刻期间的凹坑开始。 氧化膜破裂的观察表明,阴极氢进化可以在凹坑内部发生。 电流降低和阴极脉冲叠加实验表明,主动溶解的隧道尖端表面被氯化铝盐和硫酸盐离子在隧道生长期间远远地落后于隧道。

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