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首页> 外文期刊>Electrochemistry communications >Interpretation f Potential Transients during Aluminum Etch Tunnel Growth in the Presence of Sulfuric Acid
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Interpretation f Potential Transients during Aluminum Etch Tunnel Growth in the Presence of Sulfuric Acid

机译:硫酸存在下铝蚀刻隧道生长过程中的瞬态现象解释

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When sulfuric acid is added in an etching solution of 1 M hydrochloric acid, the effect of the sulfate ions on the aluminum etch pit formation and tunnel growth was investigated with the morphology study and current interruptions in applied etching current. Initial potential transient supports that sulfate ion works a film forming agent and inhibits the pit initiation during the anodic current etching. Observation of ruptured oxide films suggests that cathodic hydrogen evolution can take place inside the pits. Current step reduction and cathodic pulse superimposition experiments indicate that the actively dissolving tunnel tip surface is covered with aluminum chloride salts and sulfate ion moves far behind inside tunnels during the tunnel growth.
机译:当在1 M盐酸的蚀刻溶液中添加硫酸时,通过形态学研究和施加的蚀刻电流中断,研究了硫酸根离子对铝蚀刻坑形成和隧道生长的影响。初始电位瞬变支持硫酸根离子起着成膜剂的作用,并在阳极电流蚀刻过程中抑制凹坑的产生。对破裂的氧化膜的观察表明,阴极氢的析出可以在坑内发生。目前的阶跃减少和阴极脉冲叠加实验表明,积极溶解的隧道尖端表面覆盖有氯化铝盐,并且在隧道生长过程中,硫酸根离子在隧道内部向后移动。

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