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首页> 外文期刊>Materials science in semiconductor processing >GaN Schottky barrier diode with thermally stable nickel nitride electrode deposited by reactive sputtering
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GaN Schottky barrier diode with thermally stable nickel nitride electrode deposited by reactive sputtering

机译：GaN肖特基势垒二极管与反应溅射沉积的热稳定镍氮化物电极

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摘要

Nickel nitride (NiN) electrode was prepared by magnetron reactive sputtering for GaN Schottky barrier diodes (SBDs) application. The X-ray diffraction spectrum of and X-ray photoelectron spectroscopy confirm that Ni3N is the dominant phase in the electrode film. Compare with the Ni-SBDs, NiN-SBDs show much better rectification characteristics, in which the Schottky barrier height and the turn-on voltage increase 0.2 eV and 0.18 V, respectively, and the leakage current is reduced by two orders. The temperature-dependent current-voltage characteristics demonstrate that the NiN-SBDs have better thermal stability than that of the Ni-SBDs, owing to the suppression of interface reaction between Ni and GaN. In addition, the thermal stability of the GaN diode with NiN anode is potential for temperature sensing application with the sensitivity of approximately 1.3 mV/K.
机译：通过用于GaN肖特基势垒二极管（SBDS）施用的磁控反应溅射制备氮化镍（nin）电极。 X射线衍射光谱和X射线光电子能谱证实Ni3N是电极膜中的显性相位。 与NI-SBD相比，NIN-SBD分别显示出更好的整流特性，其中肖特基势垒高度和开启电压分别增加0.2eV和0.18 V，漏电流减少了两个订单。 由于Ni和GaN之间的界面反应抑制，温度依赖性电流 - 电压特性表明Nin-SBD具有比Ni-SBD的热稳定性更好。 此外，GaN二极管的热稳定性与Nin阳极是温度感测应用的电位，灵敏度约为1.3mV / k。

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  • 来源
  • 作者

    Li Xiaobo; Hoshi Taiki; Li Liuan; Pu Taofei; Zhang Tong; Xie Tian; Li Xianjie; Ao Jin-Ping;

  • 作者单位

    Beijing Univ Posts &

    Telecommun Inst Informat Photon &

    Opt Commun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Tokushima Univ Inst Sci &

    Technol Tokushima 7708506 Japan;

    Sun Yat Sen Univ Sch Elect &

    Informat Technol Guangzhou 510275 Guangdong Peoples R China;

    Tokushima Univ Inst Sci &

    Technol Tokushima 7708506 Japan;

    Tokushima Univ Inst Sci &

    Technol Tokushima 7708506 Japan;

    Tokushima Univ Inst Sci &

    Technol Tokushima 7708506 Japan;

    Beijing Univ Posts &

    Telecommun Inst Informat Photon &

    Opt Commun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Tokushima Univ Inst Sci &

    Technol Tokushima 7708506 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

    Ni3N; Schottky barrier diode; reactive sputter; GaN;

    机译：ni3n;肖特基势垒二极管;反应溅射;甘;

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