Preparation of undoped and indium doped ZnO thin films by pulsed laser deposition method

Kotlyarchuk B; Savchuk V; Oszwaldowski M

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Preparation of undoped and indium doped ZnO thin films by pulsed laser deposition method

机译：脉冲激光沉积法制备无掺杂和铟掺杂的ZnO薄膜

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An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any further post-deposition annealing treatment of the grown films. The developed method allows to grow thin films at low substrate temperature that prevents them from the considerable loss of their intrinsic electrical and optical properties. The influence of deposition parameters on the electrical and optical parameters of the undoped and the indium. doped ZnO thin films is also analysed. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

机译：提出了对标准脉冲激光沉积（PLD）方法的原始修改，该方法用于在低基板温度下制备未掺杂和铟掺杂的氧化锌（ZnO：In）薄膜。该制备方法不需要对生长的膜进行任何进一步的沉积后退火处理。所开发的方法允许在较低的基板温度下生长薄膜，从而防止薄膜因其固有的电学和光学特性而遭受重大损失。沉积参数对未掺杂和铟的电学和光学参数的影响。还分析了掺杂的ZnO薄膜。（c）2005 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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来源
《Crystal Research and Technology: Journal of Experimental and Industrial Crystallography》 |2005年第12期|共6页
作者
Kotlyarchuk B; Savchuk V; Oszwaldowski M;
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正文语种 eng
中图分类晶体学;
关键词
ZnO; pulsed laser deposition; thin films; MOLECULAR-BEAM EPITAXY; BLUE PHOTOLUMINESCENCE; OPTICAL-PROPERTIES;

机译：ZnO;脉冲激光沉积;薄膜;分子束外延;蓝色光致发光;光学性能;

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专利

1. Preparation of undoped and indium doped ZnO thin films by pulsed laser deposition method [J] . Kotlyarchuk B, Savchuk V, Oszwaldowski M Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2005,第12期

机译：脉冲激光沉积法制备无掺杂和铟掺杂的ZnO薄膜
2. Electrical and optical properties of epitaxial and polycrystalline undoped and Al-doped ZnO thin films grown by pulsed laser deposition [J] . Jun Hong Noh, Jae-Sul An, Jin Young Kim, Journal of electroceramics . 2009,第2a4期

机译：通过脉冲激光沉积生长的外延和多晶无掺杂和铝掺杂的ZnO薄膜的电学和光学性质
3. Electrical and optical properties of epitaxial and polycrystalline undoped and Al-doped ZnO thin films grown by pulsed laser deposition [J] . Jun Hong Noh, Jae-Sul An, Jin Young Kim, Journal of Electroceramics . 2009,第2a4期

机译：通过脉冲激光沉积生长的外延和多晶无掺杂和铝掺杂的ZnO薄膜的电学和光学性质
4. Investigation of resistance switching properties in undoped and Indium doped SrTiO3 thin films prepared by pulsed laser deposition [C] . Weidong Yu, Xiaomin Li, Yiwen Zhang Materials Research Society Symposium . 2009

机译：通过脉冲激光沉积制备的未掺杂和铟掺杂SRTIO3薄膜的电阻切换性能研究
5. Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn, Mg)O by pulsed laser deposition. [D] . Li, Yuanjie. 2006

机译：通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和（Zn，Mg）O。
6. Fabrication of Y2O3-Doped Zirconia/Gadolinia-Doped Ceria Bilayer Electrolyte Thin Film SOFC Cells of SOFCs by Single-Pulsed Laser Deposition Processing [O] . T. Mukai, S. Tsukui, K. Yoshida, -1

机译：通过单脉冲激光沉积工艺制备Y2O3掺杂氧化锆/氧化G二氧化铈双层电解质薄膜SOFC的SOFC电池。
7. Preparation and Evaluation of Sulfur-Doped Titanium Oxide Thin Film by Pulsed Laser Deposition Method [O] . Masaki YOSHINAGA, Minoru MATSUDA, Nobuaki SATO, 2008

机译：脉冲激光沉积法制备硫掺杂硫氧化钛薄膜的制备与评价

Preparation of undoped and indium doped ZnO thin films by pulsed laser deposition method

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