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首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >Photoelectrical properties of crystalline titanium dioxide thin films after thermo-annealing
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Photoelectrical properties of crystalline titanium dioxide thin films after thermo-annealing

机译：热退火后结晶二氧化钛薄膜的光电性能

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摘要

This paper reports the photoelectrical properties of sol gel derived titanium dioxide (TiO2) thin films annealed at different temperatures (425-900 degrees C). The structure of the as-grown film was found to be amorphous and it transforms to crystalline upon annealing. The trap levels are studied by thermally stimulated current (TSC) measurements. A single trap level with activation energy of 1.5 eV was identified. The steady state and transient photocurrent was measured and the results are discussed on the basis of structural transformation. The photocurrent was found to be maximum for the films annealed at 425 degrees C and further it decreases with annealing at higher temperatures. The photoconduction parameters such as carrier lifetime, lifetime decay constant and photosensitivity were calculated and the results are discussed as a function of annealing temperature. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译：本文报道了在不同温度（425-900摄氏度）下退火的溶胶凝胶衍生的二氧化钛（TiO2）薄膜的光电性能。发现生长的膜的结构是非晶态的，并且在退火时其转变为晶体。通过热激电流（TSC）测量来研究陷阱能级。鉴定出具有1.5 eV激活能的单个陷阱能级。测量了稳态和瞬态光电流，并在结构转变的基础上讨论了结果。发现在425℃下退火的膜的光电流最大，并且随着在较高温度下的退火而减小。计算了载流子寿命，寿命衰减常数和光敏度等光电导参数，并讨论了退火温度的函数结果。 （C）2007 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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