Low-Temperature Molecular Beam Epitaxy of GaAs: Influence of Crystallization Conditions on Structure and Properties of Layers

L. G. Lavrenteva; M. D. Vilisova; V. V. Preobrazhenskii; V. V. Chaldyshev

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Low-Temperature Molecular Beam Epitaxy of GaAs: Influence of Crystallization Conditions on Structure and Properties of Layers

机译：GaAs的低温分子束外延：结晶条件对层结构和性能的影响

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A nontraditional approach to the control of GaAs properties via the introduction of an excessive amount of arsenic during growth of epitaxial layers under conditions of low-temperature molecular-beam epitaxy (LT-GaAs layers) is considered. The influence of excessive arsenic on the structure and properties of asgrown and annealed LT-GaAs layers is considered as well as the effect of layer doping on the "capture" of excess arsenic.

机译：考虑了在低温分子束外延（LT-GaAs层）的条件下通过在外延层的生长期间引入过量的砷来控制GaAs性质的非传统方法。考虑了过量砷对已生长和退火的LT-GaAs层的结构和性能的影响，以及层掺杂对过量砷“捕获”的影响。

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《Crystallography reports》 |2002年第1期|共10页
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L. G. Lavrenteva; M. D. Vilisova; V. V. Preobrazhenskii; V. V. Chaldyshev;
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中图分类晶体学;
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1. Low-Temperature Molecular Beam Epitaxy of GaAs: Influence of Crystallization Conditions on Structure and Properties of Layers [J] . L. G. Lavrenteva, M. D. Vilisova, V. V. Preobrazhenskii, Crystallography reports . 2002,第Suppla1期

机译：GaAs的低温分子束外延：结晶条件对层结构和性能的影响
2. Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy [J] . L. G. Lavrentieva, M. D. Vilisova, I. A. Bobrovnikova, Russian physics journal . 2006,第12期

机译：低温分子束外延生长的GaAs和InGaAs层中的缺陷
3. INFLUENCE OF DEEP STATES ON LUMINESCENCE PROPERTIES OF GRIN-SCH-SQW GaAs/AlGaAs STRUCTURES GROWN BY MOLECULAR BEAM EPITAXY [J] . J. KANIEWSKI, M. WESOLOWSKI, K. REGINSKI, Electron Technology . 1996,第2a3期

机译：深度对分子束表观生长的GRIN-SCH-SQW GaAs / AlGaAs结构的发光性能的影响
4. The influence of growth and annealing conditions on the structural quality of LT-GaAs layers grown on 111B substrate by molecular beam epitaxy [C] . Guerret-Piecourt, C., Toufella, . 1998

机译：生长和退火条件对分子束外延生长在111 B衬底上的LT-GaAs层结构质量的影响
5. Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions. [D] . Watson, John D. 2015

机译：通过分子束外延生长低无序GaAs / AlGaAs异质结构，以研究二维相关电子相。
6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

机译：分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质：热退火的影响
7. Optical properties of (113) GaAs/AlAs superlattices grown by molecular beam epitaxy and atomic layer molecular beam epitaxy [O] . Armelles Reig, Gaspar, Domínguez, P. S., González Sotos, Luisa 1995

机译：分子束外延和原子层分子束外延生长的（113）GaAs / AlAs超晶格的光学性质
8. InGaAs/AlGaAs Intersubband Transition Structures Grown on InAlAs Buffer Layers on GaAs Substrates by Molecular Beam Epitaxy [R] . Katzer, D. S. , Rabinovich, W. S. , Beadie, G. 2000

机译：通过分子束外延在Gaas衬底上的Inalas缓冲层上生长的InGaas / alGaas子带间跃迁结构

Low-Temperature Molecular Beam Epitaxy of GaAs: Influence of Crystallization Conditions on Structure and Properties of Layers

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