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首页> 外文期刊>Crystallography reports >X-Ray Diffraction Study of Short-Period AlN/GaN Superlattices
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X-Ray Diffraction Study of Short-Period AlN/GaN Superlattices

机译：短周期AlN / GaN超晶格的X射线衍射研究

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The structure of short-period hexagonal GaN/AlN superlattices (SLs) has been investigated by X-ray diffraction. The samples have been grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal reactor at a temperature of 1050°C on (0001)Al_2O_3 substrates using GaN and AlN buffer layers. The SL period changes from 2 to 6 nm, and the thickness of the structure varies in a range from 0.3 to 1 μm. The com-plex of X-ray diffraction techniques includes a measurement of θ-2θ rocking curves of symmetric Bragg reflection, the construction of intensity maps for asymmetric reflections, a measurement and analysis of peak broadenings in different diffraction geometries, a precise measurement of lattice parameters, and the deter-mination of radii of curvature. The thickness and strain of separate SL layers are determined by measuring the θ-2θ rocking curves subsequent simulation. It is shown that most SL samples are completely relaxed as a whole. At the same time, relaxation is absent between sublayers, which is why strains in the AlN and GaN sublayers (on the order of 1.2 × 10~(-2)) have different signs. An analysis of diffraction peak half-widths allows us to determine the densities of individual sets of dislocations and observe their change from buffer layers to SLs
机译：通过X射线衍射研究了短周期六角形GaN / AlN超晶格（SLs）的结构。样品已通过金属有机气相外延（MOVPE）在卧式反应器中于1050°C的温度下使用GaN和AlN缓冲层在（0001）Al_2O_3衬底上生长。 SL周期从2nm变化至6nm，并且结构的厚度在0.3μm至1μm的范围内变化。 X射线衍射技术的复杂性包括对称布拉格反射的θ-2θ摇摆曲线的测量，非对称反射强度图的构建，不同衍射几何中峰展宽的测量和分析，晶格的精确测量参数，以及曲率半径的确定。分离的SL层的厚度和应变可通过随后测量θ-2θ摇摆曲线来确定。结果表明，大多数SL样本整体上是完全松弛的。同时，子层之间不存在松弛，这就是为什么AlN和GaN子层中的应变（约为1.2×10〜（-2））具有不同符号的原因。衍射峰半峰宽的分析使我们能够确定单组位错的密度并观察其从缓冲层到SL的变化

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